⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL177481 | 0.61 | — | — | |
| SCHEMBL1255601 | 0.61 | — | — | |
| SCHEMBL2734160 | 0.55 | — | — | |
| SCHEMBL8587258 | 0.55 | — | — | |
| SCHEMBL23296276 | 0.50 | — | — | |
| SCHEMBL155219 | 0.50 | — | — | |
| SCHEMBL378744 | 0.50 | — | — | |
| SCHEMBL3489090 | 0.50 | — | — | |
| SCHEMBL703656 | 0.50 | — | — | |
| SCHEMBL7737619 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1197999-B1 | METHOD OF FORMING LOW-DIELECTRIC-CONSTANT FILM, AND SEMICONDUCTOR SUBSTRATE WITH LOW-DIELECTRIC-CONSTANT FILM | JGC CATALYSTS & CHEMICALS LTD (JP) | 2010-02-17 | — | — | EP | disclosed |
| EP-1035183-B1 | COATING FLUID FOR FORMING LOW-PERMITTIVITY SILICA-BASED COATING FILM AND SUBSTRATE WITH LOW-PERMITTIVITY COATING FILM | JGC CATALYSTS & CHEMICALS LTD (JP) | 2009-11-25 | — | — | EP | disclosed |
| US-6716773-B2 | Forming a coating film by coating an insulating film-forming coating liquid on substrate mounted on a rotating disc of a spin coater; removing a projected portion of coating film formed at periphery of substrate by ejecting a solvent | CATALYSTS & CHEMICALS INDUSTRIES CO., LTD. (JP) | 2004-04-06 | — | — | US | disclosed |
| US-6599846-B2 | Method of forming a silica-containing coating film with a low dielectric constant and semiconductor substrate coated with such a film | CATALYSTS & CHEMICALS INDUSTRIES CO., LTD. (JP) | 2003-07-29 | — | — | US | disclosed |
| US-20030062599-A1 | Process for producing semiconductor substrates and semiconductor substrates | CATALYSTS & CHEMICALS INDUSTRIES CO., LTD. | 2003-04-03 | — | — | US | disclosed |
| EP-1296358-A2 | Process for producing semiconductor substrates | Catalysts & Chemicals Industries Co., Ltd. (JP) | 2003-03-26 | — | — | EP | disclosed |
| US-20020187652-A1 | Method of forming a silica-containing coating film with a low dielectric constant and semiconductor substrate coated with such a film | CATALYSTS & CHEMICALS INDUSTRIES CO., LTD. (JP) | 2002-12-12 | — | — | US | disclosed |
| US-6451436-B1 | EXCELLENT IN RESISTANCE TO OXYGEN PLASMA AND ETCHING; REACTION PRODUCT BETWEEN FINE PARTICLES OF SILICA AND A HALOGENATED SILANE OR A HYDROLYZATE THEREOF EXHIBITS A DIELECTRIC CONSTANT AS LOW AS 3;MECHANICAL STRENGTH AND CHEMICAL RESISTANCE | CATALYSTS & CHEMICALS INDUSTRIES CO., LTD. (JP) | 2002-09-17 | — | — | US | disclosed |
| EP-1197999-A1 | METHOD OF FORMING LOW-DIELECTRIC-CONSTANT FILM, AND SEMICONDUCTOR SUBSTRATE WITH LOW-DIELECTRIC-CONSTANT FILM | Catalysts & Chemicals Industries Co., Ltd. (JP) | 2002-04-17 | — | — | EP | disclosed |
| EP-1035183-A1 | COATING FLUID FOR FORMING LOW-PERMITTIVITY SILICA-BASED COATING FILM AND SUBSTRATE WITH LOW-PERMITTIVITY COATING FILM | Catalysts & Chemicals Industries Co., Ltd. (JP) | 2000-09-13 | — | — | EP | disclosed |
| EP-0301678-B1 | METHOD OF SELECTIVE REDUCTION OF POLYHALOSILANES WITH ALKYLTIN HYDRIDES | DOW CORNING CORPORATION (US) | 1993-03-24 | — | — | EP | disclosed |
| US-4814155-A | Method of selective reduction of polyhalosilanes with alkyltin hydrides | DOW CORNING CORPORATION (US) | 1989-03-21 | — | — | US | disclosed |
| EP-0301678-A2 | Method of selective reduction of polyhalosilanes with alkyltin hydrides | DOW CORNING CORPORATION (US) | 1989-02-01 | — | — | EP | disclosed |