⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18131679 | 0.72 | — | — | |
| SCHEMBL177481 | 0.61 | — | — | |
| SCHEMBL1255601 | 0.61 | — | — | |
| SCHEMBL5344169 | 0.58 | — | — | |
| SCHEMBL23749599 | 0.55 | — | — | |
| SCHEMBL2734160 | 0.55 | — | — | |
| SCHEMBL8354132 | 0.55 | — | — | |
| SCHEMBL8587258 | 0.55 | — | — | |
| SCHEMBL378743 | 0.50 | — | — | |
| SCHEMBL23296276 | 0.50 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 76 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4748968-A1 | METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS | Hansol Chemical Co., Ltd (KR) | 2026-05-27 | — | — | EP | claimed |
| EP-4667616-A1 | METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR | Hansol Chemical Co., Ltd (KR) | 2025-12-24 | — | — | EP | claimed |
| US-20250369114-A1 | METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR | HANSOL CHEMICAL CO LTD (KR) | 2025-12-04 | — | — | US | claimed |
| WO-2025018802-A1 | METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS | 주식회사 한솔케미칼 | 2025-01-23 | — | — | WO | claimed |
| US-11784026-B2 | Substrate processing apparatus, material layer deposition apparatus, and atmospheric pressure chemical vapor deposition apparatus | SAMSUNG ELECTRONICS CO., LTD. | 2023-10-10 | — | — | US | claimed |
| US-20210222300-A1 | SUBSTRATE PROCESSING APPARATUS, MATERIAL LAYER DEPOSITION APPARATUS, AND ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION APPARATUS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2021-07-22 | — | — | US | claimed |
| CN-100334182-C | Process for preparing silicon blue photoluminescent material | UNIV TIANJIN TECHNOLOGY (CN) | 2007-08-29 | — | — | CN | claimed |
| EP-0296702-A2 | Method of forming semiconducting amorphous silicon films from the thermal decompositon of fluorohydridodisilanes | DOW CORNING CORPORATION (US) | 1988-12-28 | — | — | EP | claimed |
| US-4762808-A | Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes | DOW CORNING CORPORATION (US) | 1988-08-09 | — | — | US | claimed |
| JP-63030398-A | — | — | None | — | — | JP | disclosed |
| JP-8134082-A | — | — | None | — | — | JP | disclosed |
| JP-1009614-A | — | — | None | — | — | JP | disclosed |
| EP-4748968-A1 | METHOD FOR FORMING THIN FILM USING TWO TYPES OF SILICON PRECURSOR COMPOUNDS | Hansol Chemical Co., Ltd (KR) | 2026-05-27 | — | — | EP | disclosed |
| EP-4667616-A1 | METHOD FOR THE FORMATION OF THIN FILMS USING TWO TYPES OF SILICON PRECURSOR | Hansol Chemical Co., Ltd (KR) | 2025-12-24 | — | — | EP | disclosed |
| EP-0296702-A2 | Method of forming semiconducting amorphous silicon films from the thermal decompositon of fluorohydridodisilanes | DOW CORNING CORPORATION (US) | 1988-12-28 | — | — | EP | disclosed |
| EP-0296702-A2 | Method of forming semiconducting amorphous silicon films from the thermal decompositon of fluorohydridodisilanes | DOW CORNING CORPORATION (US) | 1988-12-28 | — | — | EP | disclosed |
| US-4762808-A | Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes | DOW CORNING CORPORATION (US) | 1988-08-09 | — | — | US | disclosed |
| US-4762808-A | Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes | DOW CORNING CORPORATION (US) | 1988-08-09 | — | — | US | disclosed |
| US-4762808-A | Method of forming semiconducting amorphous silicon films from the thermal decomposition of fluorohydridodisilanes | DOW CORNING CORPORATION (US) | 1988-08-09 | — | — | US | disclosed |
| JP-S6330398-A | EPITAXY | TOSHIBA CORP | 1988-02-09 | — | — | JP | disclosed |