SCHEMBL31664560

SCHEMBL31664560

COc1cc2[nH]c(=O)cc(OC)c2cc1OC

nearest known ligand 0.59

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 7/20 0.59
ALDH1A1 P00352 7/20 0.59
HPGD P15428 5/20 0.59
SMN1; SMN2 Q16637 2/20 0.59
GRIN2D O15399 1/20 0.55
GRIN3B O60391 1/20 0.55
GRIN1 Q05586 1/20 0.55
GRIN2A Q12879 1/20 0.55
GRIN2B Q13224 1/20 0.55
GRIN2C Q14957 1/20 0.55
GRIN3A Q8TCU5 1/20 0.55
AR P10275 1/20 0.51
MAPT P10636 3/20 0.50
MPO P05164 2/20 0.50
XDH P47989 2/20 0.50
BLM P54132 1/20 0.50
TDP1 Q9NUW8 1/20 0.50
CYP19A1 P11511 1/20 0.49
NQO2 P16083 1/20 0.49
KMT2A Q03164 2/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19146396 0.86 NQO2 (0.60) KDM4EALDH1A1HPGDSMN1; SMN2GRIN2D
SCHEMBL30081022 0.83 KDM4E (0.54) KDM4EALDH1A1HPGDSMN1; SMN2GRIN2D
SCHEMBL28314220 0.83 KDM4E (0.54) KDM4EALDH1A1HPGDSMN1; SMN2GRIN2D
SCHEMBL8195979 0.81 AR (0.44) KDM4EALDH1A1HPGDSMN1; SMN2GRIN2D
SCHEMBL24391685 0.80 KDM4E (0.51) KDM4EALDH1A1HPGDSMN1; SMN2GRIN2D
SCHEMBL17009604 0.80 KDM4E (0.46) KDM4EALDH1A1HPGDSMN1; SMN2GRIN2D
SCHEMBL6678538 0.79 AR (0.57) KDM4EALDH1A1HPGDSMN1; SMN2AR
SCHEMBL31195781 0.78 KDM4E (0.61) KDM4EALDH1A1HPGDSMN1; SMN2GRIN2D
SCHEMBL7983948 0.78 KDM4E (0.61) KDM4EALDH1A1HPGDSMN1; SMN2GRIN2D
SCHEMBL12533056 0.78 AR (0.57) KDM4EALDH1A1HPGDSMN1; SMN2AR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250236792-A1 ETCHANT COMPOSITION FOR ETCHING SILICON AND METHOD OF FORMING PATTERN USING THE SAME DONGWOO FINE-CHEM CO., LTD. (KR) 2025-07-24 US disclosed