⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5485442 | 0.74 | — | — | |
| SCHEMBL16714015 | 0.73 | — | — | |
| SCHEMBL18760654 | 0.73 | KMT2A (0.31) | — | |
| SCHEMBL3482532 | 0.73 | ALDH1A1 (0.40) | — | |
| SCHEMBL12814583 | 0.72 | RAPGEF4 (0.32) | — | |
| SCHEMBL5482506 | 0.72 | TSHR (0.36) | — | |
| SCHEMBL12816348 | 0.71 | MEN1 (0.37) | — | |
| SCHEMBL12816012 | 0.71 | MEN1 (0.37) | — | |
| SCHEMBL1686628 | 0.71 | ESR1 (0.32) | — | |
| SCHEMBL16707554 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7646081-B2 | Low-K dielectric material | SILECS OY (FI) | 2010-01-12 | — | — | US | disclosed |
| US-7646081-B2 | Low-K dielectric material | SILECS OY (FI) | 2010-01-12 | — | — | US | disclosed |
| US-7622399-B2 | Method of forming low-k dielectrics using a rapid curing process | SILECS OY (FI) | 2009-11-24 | — | — | US | disclosed |
| US-7622399-B2 | Method of forming low-k dielectrics using a rapid curing process | SILECS OY (FI) | 2009-11-24 | — | — | US | disclosed |
| US-20090278254-A1 | Dielectric materials and methods for integrated circuit applications | SILECS OY (FI) | 2009-11-12 | — | — | US | disclosed |
| US-20090278254-A1 | Dielectric materials and methods for integrated circuit applications | SILECS OY (FI) | 2009-11-12 | — | — | US | disclosed |
| US-20070190800-A1 | Low-k dielectric material | SILECS OY (FI) | 2007-08-16 | — | — | US | disclosed |
| US-20070190800-A1 | Low-k dielectric material | SILECS OY (FI) | 2007-08-16 | — | — | US | disclosed |
| US-20070063188-A1 | Low-k dielectric material | SILECS OY (FI) | 2007-03-22 | — | — | US | disclosed |
| US-20070063188-A1 | Low-k dielectric material | SILECS OY (FI) | 2007-03-22 | — | — | US | disclosed |
| US-20050064726-A1 | Method of forming low-k dielectrics | SILECS OY (FI) | 2005-03-24 | — | — | US | disclosed |
| US-20050032357-A1 | Dielectric materials and methods for integrated circuit applications | SILECS OY (FI) | 2005-02-10 | — | — | US | disclosed |