Known targets — ChEMBL curated mechanism
GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL98071 | 0.97 | — | — | |
| Water SCHEMBL28430193 | 0.93 | — | — | |
| SCHEMBL28078540 | 0.93 | — | — | |
| Ammonia Solution, Strong SCHEMBL28070208 | 0.93 | — | — | |
| Bromide SCHEMBL6153681 | 0.93 | — | — | |
| Fluoride Ion SCHEMBL17870610 | 0.93 | — | — | |
| Hydrochloric Acid SCHEMBL93723 | 0.93 | — | — | |
| SCHEMBL29115132 | 0.93 | — | — | |
| Hydrochloric Acid SCHEMBL11059653 | 0.93 | — | — | |
| Water SCHEMBL28075999 | 0.91 | TSHR (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 450 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115651162-B | Polyisocyanate composition with low free monomer, high compatibility and good dilution stability and preparation method thereof | 万华化学集团股份有限公司 | 2025-02-18 | — | — | CN | claimed |
| US-20250026960-A1 | POLISHING SLURRY COMPOSITION | KCTECH CO.,LTD. (KR) | 2025-01-23 | — | — | US | claimed |
| CN-117946812-A | Cleaning composition | 安集微电子科技（上海）股份有限公司 | 2024-04-30 | — | — | CN | claimed |
| WO-2024083019-A1 | CLEANING COMPOSITION | 安集微电子科技（上海）股份有限公司 | 2024-04-25 | — | — | WO | claimed |
| CN-117106528-A | Semiconductor substrate cleaning liquid composition | JL化学株式会社 | 2023-11-24 | — | — | CN | claimed |
| WO-2023121037-A1 | POLISHING SLURRY COMPOSITION | 주식회사 케이씨텍 | 2023-06-29 | — | — | WO | claimed |
| CN-115651162-A | Polyisocyanate composition with low free monomer, high compatibility and good open-dilution stability and preparation method thereof | 万华化学集团股份有限公司 | 2023-01-31 | — | — | CN | claimed |
| CN-115286588-A | Process for preparing pentamethylene isocyanurate | 中海油常州涂料化工研究院有限公司 | 2022-11-04 | — | — | CN | claimed |
| CN-110777381-B | Composition for TiN hardmask removal and etch residue cleaning | 弗萨姆材料美国有限责任公司 | 2022-10-04 | — | — | CN | claimed |
| US-20220064803-A1 | Hafnium Oxide Corrosion Inhibitor | VERSUM MATERIALS US, LLC (US) | 2022-03-03 | — | — | US | claimed |
| US-20060016785-A1 | Composition for removing photoresist and/or etching residue from a substrate and use thereof | VERSUM MATERIALS US, LLC | 2006-01-26 | — | — | US | claimed |
| EP-1619557-A1 | Composition for removing photoresist and/or etching residue from a substrate and use thereof | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2006-01-25 | — | — | EP | claimed |
| US-20060014656-A1 | Composition for stripping and cleaning and use thereof | VERSUM MATERIALS US, LLC | 2006-01-19 | — | — | US | claimed |
| US-20060003910-A1 | Composition and method comprising same for removing residue from a substrate | AIR PRODUCTS AND CHEMICALS, INC. | 2006-01-05 | — | — | US | claimed |
| EP-1612858-A2 | Composition for stripping and cleaning and use thereof | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2006-01-04 | — | — | EP | claimed |
| EP-1610185-A2 | Composition and method using same for removing residue from a substrate | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2005-12-28 | — | — | EP | claimed |
| US-5846695-A | Removing agent composition for a photoresist and process for producing a semiconductor integrated circuit | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 1998-12-08 | — | — | US | claimed |
| EP-0463423-B1 | Surface treating agent for aluminum line pattern substrate | MITSUBISHI GAS CHEMICAL CO (JP) | 1995-08-30 | — | — | EP | claimed |
| US-5174816-A | SURFACE TREATING AGENT FOR ALUMINUM LINE PATTERN SUBSTRATE | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 1992-12-29 | — | — | US | claimed |
| EP-0463423-A1 | Surface treating agent for aluminum line pattern substrate | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 1992-01-02 | — | — | EP | claimed |