⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL703210 | 0.73 | ALDH1A1 (0.35) | — | |
| SCHEMBL703367 | 0.73 | — | — | |
| SCHEMBL124751 | 0.73 | TSHR (0.39) | — | |
| SCHEMBL55166 | 0.73 | — | — | |
| SCHEMBL1539360 | 0.73 | TSHR (0.39) | — | |
| SCHEMBL16490334 | 0.73 | ACHE (0.43) | — | |
| SCHEMBL14875991 | 0.71 | TSHR (0.37) | — | |
| Hydrochloric Acid SCHEMBL11803910 | 0.71 | TSHR (0.37) | — | |
| SCHEMBL2522935 | 0.71 | TSHR (0.37) | — | |
| SCHEMBL2799322 | 0.71 | TSHR (0.37) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3355390-B1 | LITHIUM SECONDARY BATTERY INCLUDING ELECTROLYTE CONTAINING MONOFLUOROSILANE COMPOUND | SAMSUNG ELECTRONICS CO LTD (KR) | 2020-02-12 | — | — | EP | disclosed |
| EP-3355390-A1 | LITHIUM SECONDARY BATTERY INCLUDING ELECTROLYTE CONTAINING MONOFLUOROSILANE COMPOUND | Samsung Electronics Co., Ltd. (KR) | 2018-08-01 | — | — | EP | disclosed |
| US-8791221-B2 | Addition-curable metallosiloxane compound | DAICEL CORPORATION (JP) | 2014-07-29 | — | — | US | disclosed |
| EP-2650319-A1 | ADDITION-CURABLE METALLOSILOXANE COMPOUND | Daicel Corporation (JP) | 2013-10-16 | — | — | EP | disclosed |
| US-20130267653-A1 | ADDITION-CURABLE METALLOSILOXANE COMPOUND | DAICEL CORPORATION (JP) | 2013-10-10 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| US-5635579-A | MIXING FLUOROSILICONE CYCLIC OLIGOMER, METHYLSILOXANE CYCLIC OLIGOMER, PHENYLSILOXANE CYCLIC OLIGOMER, CHAIN STOPPER, RING OPENING CATALYST, HEATING TO FORM FLUOROSILICONE TERPOLYMERIC FLUID | GENERAL ELECTRIC COMPANY (US) | 1997-06-03 | — | — | US | disclosed |