⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5550883 | 0.87 | — | — | |
| SCHEMBL3235769 | 0.87 | — | — | |
| SCHEMBL3238199 | 0.87 | — | — | |
| SCHEMBL4623005 | 0.82 | — | — | |
| SCHEMBL245696 | 0.82 | — | — | |
| SCHEMBL15991 | 0.82 | — | — | |
| SCHEMBL3235143 | 0.78 | — | — | |
| SCHEMBL14575662 | 0.78 | — | — | |
| Water SCHEMBL15139846 | 0.67 | — | — | |
| SCHEMBL3845487 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 161 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-111466012-B | Semiconductor device having heterojunction of indium gallium nitride ternary alloy layer and second group III nitride ternary alloy layer | 阿卜杜拉国王科技大学 | 2023-09-29 | — | — | CN | claimed |
| CN-111406305-B | Semiconductor device having heterojunction of boron-gallium nitride ternary alloy layer and second group III-nitride ternary alloy layer | 阿卜杜拉国王科技大学 | 2023-08-22 | — | — | CN | claimed |
| CN-111466013-B | Semiconductor device having heterojunction of boron nitride aluminum ternary alloy layer and second group III nitride ternary alloy layer | 阿卜杜拉国王科技大学 | 2023-08-22 | — | — | CN | claimed |
| CN-111480215-B | Semiconductor device having heterojunction of indium aluminum nitride ternary alloy layer and second group III nitride ternary alloy layer | 阿卜杜拉国王科技大学 | 2023-08-15 | — | — | CN | claimed |
| CN-111492465-B | Semiconductor device having heterojunction of aluminum gallium nitride ternary alloy layer and second group III nitride ternary alloy layer | 阿卜杜拉国王科技大学 | 2023-08-11 | — | — | CN | claimed |
| CN-116469981-A | High-luminous-efficiency light-emitting diode and preparation method thereof | 江西兆驰半导体有限公司 | 2023-07-21 | — | — | CN | claimed |
| US-11049943-B2 | Method for forming III-nitride semiconductor device and the III-nitride semiconductor device | Suzhou Han Hua Semiconductor Co., Ltd. (CN) | 2021-06-29 | — | — | US | claimed |
| US-20200274024-A1 | III-NITRIDE SEMICONUCTOR DEVICES HAVING A BORON NITRIDE ALLOY CONTACT LAYER AND METHOD OF PRODUCTION | KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (SA) | 2020-08-27 | — | — | US | claimed |
| CN-111492465-A | Semiconductor device having a heterojunction with an aluminum gallium nitride ternary alloy layer and a second group III nitride ternary alloy layer | 阿卜杜拉国王科技大学 | 2020-08-04 | — | — | CN | claimed |
| CN-111480215-A | Semiconductor device having a heterojunction with an indium aluminum nitride ternary alloy layer and a second group III nitride ternary alloy layer | 阿卜杜拉国王科技大学 | 2020-07-31 | — | — | CN | claimed |
| CN-111466013-A | Semiconductor device having a heterojunction with a boron aluminum nitride ternary alloy layer and a second group III nitride ternary alloy layer | 阿卜杜拉国王科技大学 | 2020-07-28 | — | — | CN | claimed |
| US-20200234952-A1 | SEMICONDUCTOR DEVICES HAVING HETEROJUNCTIONS OF AN ALUMINUM GALLIUM NITRIDE TERNARY ALLOY LAYER AND A SECOND III NITRIDE TERNARY ALLOY LAYER | KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (SA) | 2020-07-23 | — | — | US | claimed |
| CN-111406305-A | Semiconductor device having a heterojunction with a boron-gallium-nitride ternary alloy layer and a second group-III-nitride ternary alloy layer | 阿卜杜拉国王科技大学 | 2020-07-10 | — | — | CN | claimed |
| CN-111279495-A | Group III nitride semiconductor device having boron nitride alloy contact layer and method for manufacturing the same | 阿卜杜拉国王科技大学 | 2020-06-12 | — | — | CN | claimed |
| US-20200052076-A1 | Method for Forming III-Nitride Semiconductor Device and the III-Nitride Semiconductor Device | Suzhou Han Hua Semiconductor Co.,Ltd (CN) | 2020-02-13 | — | — | US | claimed |
| US-9972708-B2 | Double heterojunction field effect transistor with polarization compensated layer | QORVO US, INC. (US) | 2018-05-15 | — | — | US | claimed |
| US-20170278958-A1 | DOUBLE HETEROJUNCTION FIELD EFFECT TRANSISTOR WITH POLARIZATION COMPENSATED LAYER | QORVO US, INC. | 2017-09-28 | — | — | US | claimed |
| EP-1593162-A4 | SEMICONDUCTOR DEVICE, PRODUCTION METHOD THEREOF AND LIGHT-EMITTING DEVICE | SHOWA DENKO KK (JP) | 2009-01-28 | — | — | EP | claimed |
| EP-1593162-A1 | SEMICONDUCTOR DEVICE, PRODUCTION METHOD THEREOF AND LIGHT-EMITTING DEVICE | Showa Denko K.K. (JP) | 2005-11-09 | — | — | EP | claimed |
| WO-2004070846-A1 | SEMICONDUCTOR DEVICE, PRODUCTION METHOD THEREOF AND LIGHT-EMITTING DEVICE | SHOWA DENKO K. K. (JP) | 2004-08-19 | — | — | WO | claimed |