⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3287946 | 0.88 | NPC1 (0.35) | — | |
| SCHEMBL3289780 | 0.83 | GPR3 (0.31) | — | |
| Trifluoromethanesulfonic Acid SCHEMBL31720817 | 0.81 | KCNH2 (0.39) | — | |
| SCHEMBL5691997 | 0.78 | CA2 (0.33) | — | |
| SCHEMBL5691705 | 0.77 | CA2 (0.35) | — | |
| SCHEMBL3286819 | 0.77 | MAPT (0.37) | — | |
| SCHEMBL5690740 | 0.75 | CA2 (0.35) | — | |
| SCHEMBL3287935 | 0.73 | NPC1 (0.35) | — | |
| SCHEMBL6708360 | 0.73 | CA2 (0.35) | — | |
| SCHEMBL548554 | 0.69 | CA1 (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1693705-B1 | Positive resist composition and pattern forming method using the resist composition | FUJIFILM CORP (JP) | 2014-01-22 | — | — | EP | disclosed |
| US-7718344-B2 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2010-05-18 | — | — | US | disclosed |
| US-7615330-B2 | Positive resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2009-11-10 | — | — | US | disclosed |
| US-7541131-B2 | Resist composition, compound for use in the resist composition and pattern forming method using the resist composition | FUJIFILM CORPORATION (JP) | 2009-06-02 | — | — | US | disclosed |
| US-7374860-B2 | Positive resist composition and pattern forming method using the same | FUJI FILM CORPORATION (JP) | 2008-05-20 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| EP-1906241-A1 | Resist composition and pattern forming method using the same | FUJIFILM Corporation (JP) | 2008-04-02 | — | — | EP | disclosed |
| EP-1840651-A1 | Positive resist composition and pattern formation method using the same | FUJIFILM Corporation (JP) | 2007-10-03 | — | — | EP | disclosed |
| US-20070224540-A1 | Positive resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2007-09-27 | — | — | US | disclosed |
| US-20060216635-A1 | Positive resist composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2006-09-28 | — | — | US | disclosed |
| EP-1705518-A2 | Positive resist composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2006-09-27 | — | — | EP | disclosed |
| US-20060194147-A1 | Resist composition, compound for use in the resist composition and pattern forming method using the resist composition | FUJI PHOTO FILM CO., LTD. | 2006-08-31 | — | — | US | disclosed |
| EP-1693705-A2 | Resist composition, compound for use in the resist composition and pattern forming method using the resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2006-08-23 | — | — | EP | disclosed |