Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 7/20 | 0.32 |
| ▸ | CA2 | P00918 | 7/20 | 0.32 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.32 |
| ▸ | MMP1 | P03956 | 3/20 | 0.31 |
| ▸ | MMP2 | P08253 | 3/20 | 0.31 |
| ▸ | MMP9 | P14780 | 3/20 | 0.31 |
| ▸ | MMP8 | P22894 | 3/20 | 0.31 |
| ▸ | MMP13 | P45452 | 3/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2634639 | 0.99 | CA1 (0.33) | CA1CA2HSD11B1MMP1MMP2 | |
| SCHEMBL31290710 | 0.99 | CA1 (0.33) | CA1CA2HSD11B1MMP1MMP2 | |
| SCHEMBL31290709 | 0.99 | CA1 (0.33) | CA1CA2HSD11B1MMP1MMP2 | |
| SCHEMBL3134833 | 0.99 | CA1 (0.33) | CA1CA2HSD11B1MMP1MMP2 | |
| SCHEMBL4859794 | 0.87 | GPR3 (0.36) | — | |
| SCHEMBL4853778 | 0.86 | GPR3 (0.36) | CA1CA2 | |
| SCHEMBL6036449 | 0.86 | CA1 (0.33) | CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL2110845 | 0.86 | GPR3 (0.40) | HSD11B1 | |
| SCHEMBL51399 | 0.85 | CA2 (0.38) | CA1CA2MMP1MMP2MMP9 | |
| SCHEMBL1482705 | 0.85 | CA2 (0.38) | CA1CA2MMP1MMP2MMP9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 153 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2026100410-A1 | IODINE-CONTAINING POLYMERIZABLE COMPOUND AND IODINE-CONTAINING POLYMER | 三菱瓦斯化学株式会社 | 2026-05-15 | — | — | WO | disclosed |
| US-20250362597-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-11-27 | — | — | US | disclosed |
| US-20250321485-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-10-16 | — | — | US | disclosed |
| CN-119452307-A | Resist auxiliary film composition and pattern forming method using the same | 三菱瓦斯化学株式会社 | 2025-02-14 | — | — | CN | disclosed |
| CN-119422108-A | Resist composition and method for forming resist film using same | 三菱瓦斯化学株式会社 | 2025-02-11 | — | — | CN | disclosed |
| US-20240369925-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAID COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-11-07 | — | — | US | disclosed |
| US-20240369924-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-11-07 | — | — | US | disclosed |
| WO-2024014330-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| WO-2024014329-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-20070224538-A1 | Positive Resist Compositions and Process for the Formation of Resist Patterns With the Same | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-09-27 | — | — | US | disclosed |
| EP-1830228-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2007-09-05 | — | — | EP | disclosed |
| US-20070083060-A1 | for use as acid generator in semiconductor manufacture; triarylsulfonium salt having a structure that only one aromatic ring of three is different, in a high yield and by-product inhibition; reacting a diaryl sulfoxide with an aryl Grignard reagent in presence of chlorotrialkylsilane and strong acid | FUJIFILM WAKO PURE CHEMICAL CORPORATION (JP) | 2007-04-12 | — | — | US | disclosed |
| US-20070059632-A1 | Method of manufacturing a semiconductor device | MITSUBISHI GAS CHEMICAL CO., INC. (JP) | 2007-03-15 | — | — | US | disclosed |
| EP-1676835-A1 | PROCESS FOR PRODUCING TRIARYLSULFONIUM SALT | Wako Pure Chemical Industries, Ltd. (JP) | 2006-07-05 | — | — | EP | disclosed |
| EP-1666970-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2006-06-07 | — | — | EP | disclosed |
| EP-1509814-A2 | ACETAL PROTECTED POLYMERS AND PHOTORESISTS COMPOSITIONS THEREOF | Arch Specialty Chemicals, Inc. (US) | 2005-03-02 | — | — | EP | disclosed |
| US-6830870-B2 | Mixtures of addition copolymers, acid generators and solvents, used as photosensitive coatings in lithography; relief images | ARCH SPECIALITY CHEMICALS, INC. | 2004-12-14 | — | — | US | disclosed |
| US-20040034160-A1 | Acetal protected polymers and photoresists compositions thereof | ARCH SPECIALITY CHEMICALS, INC. | 2004-02-19 | — | — | US | disclosed |
| WO-2003099782-A2 | ACETAL PROTECTED POLYMERS AND PHOTORESISTS COMPOSITIONS THEREOF | ARCH SPECIALTY CHEMICALS, INC. (US) | 2003-12-04 | — | — | WO | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | CA1 1120/4885CA2 3332/4885HSD11B1 2144/4885 |
| US-20070083060-A1 | for use as acid generator in semiconductor manufacture; triarylsulfonium salt having a structure that only one aromatic ring of three is different, in a high yield and by-product inhibition; reacting a diaryl sulfoxide with an aryl Grignard reagent in presence of chlorotrialkylsilane and strong acid | ARSA, HAO2, HAO1 | CA1 96/4885CA2 38/4885HSD11B1 718/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.