SCHEMBL3297600

SCHEMBL3297600

CCCC[SiH](CCCC)Oc1ccccc1OC

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 3/20 0.48
CA2 P00918 3/20 0.48
CA7 P43166 2/20 0.48
CA9 Q16790 2/20 0.48
CA12 O43570 1/20 0.48
CA4 P22748 1/20 0.48
CA14 Q9ULX7 1/20 0.48
ALOX5 P09917 1/20 0.40
PTGS2 P35354 1/20 0.40
L3MBTL1 Q9Y468 2/20 0.40
TDP1 Q9NUW8 2/20 0.40
DRD2 P14416 1/20 0.40
DRD3 P35462 1/20 0.40
ALDH1A1 P00352 3/20 0.39
MAPK1 P28482 1/20 0.39
HTT P42858 1/20 0.39
TP53 P04637 2/20 0.39
HTR1A P08908 1/20 0.39
CYP1A2 P05177 2/20 0.38
CYP2C19 P33261 2/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28297298 0.80 CA1 (0.56) CA1CA2CA7CA9CA12
1,2-Dimethoxybenzene SCHEMBL15206586 0.78 CA1 (0.65) CA1CA2CA7CA9CA12
SCHEMBL18784862 0.75 LTA4H (0.47) CA4DRD2DRD3ALDH1A1MAPK1
1-Methoxy-2-Butoxybenzene SCHEMBL31085542 0.72 L3MBTL1 (0.63) CA1CA2CA7CA9CA12
1-Methoxy-2-Butoxybenzene SCHEMBL364856 0.72 L3MBTL1 (0.63) CA1CA2CA7CA9CA12
1,2-Dimethoxybenzene SCHEMBL22800426 0.72 CA1 (0.56) CA1CA2CA7CA9CA12
1,2-Dimethoxybenzene SCHEMBL27576916 0.72 CA1 (0.81) CA1CA2CA7CA9CA12
SCHEMBL10627370 0.72 ALDH1A1 (0.47) L3MBTL1TDP1ALDH1A1MAPK1HTT
SCHEMBL28297332 0.72 CA12 (0.50) CA1CA2CA7CA9CA12
1-Methoxy-2-Pentoxybenzene SCHEMBL15086389 0.71 L3MBTL1 (0.67) CA1CA2CA7CA9CA12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-104073157-B Diffusing agent composition, the forming method of impurity diffusion layer and solar cell 东京应化工业株式会社 2018-01-02 CN disclosed
CN-103579412-B The method of diffusion of impurity diffusion component and the manufacture method of solar cell 东京应化工业株式会社 2017-06-23 CN disclosed
CN-103374296-B Film formation composition and manufacture method, diffusing agent composition and manufacture method thereof TOKYO OHKA KOGYO CO., LTD. (JP) 2016-02-24 CN disclosed
CN-104334680-B The manufacture method of phosphor dispersion liquid and the manufacture method of LED matrix KONICA MINOLTA,INC. (JP) 2016-01-27 CN disclosed
CN-102986004-B Diffusing agent composition and method for forming impurity diffusion layer TOKYO OHKA KOGYO CO.,LTD. (JP) 2016-01-06 CN disclosed
CN-102859658-B The formation method of diffusing agent composition, impurity diffusion layer and solar cell TOKYO OHKA KOGYO CO.,LTD. (JP) 2015-09-09 CN disclosed
CN-104334680-A Method for producing phosphor dispersion liquid and method for manufacturing led device KONICA MINOLTA INC 2015-02-04 CN disclosed
CN-104073157-A Diffusant composition, method for forming impurity diffusion layer, and solar cell TOKYO OHKA KOGYO CO LTD 2014-10-01 CN disclosed
CN-102169995-B Negative electrode base member TOKYO OHKA KOGYO CO LTD 2014-09-24 CN disclosed
CN-103688340-A Diffusing agent composition, method for forming impurity diffusion layer, and solar cell TOKYO OHKA KOGYO CO LTD 2014-03-26 CN disclosed
WO-2008104874-A1 PROCESS FOR MAKING SILOXANE POLYMERS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-09-04 WO disclosed
WO-2008102259-A2 ANTIREFLECTIVE COATING COMPOSITION BASED ON A SILICON POLYMER AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-08-28 WO disclosed
US-20080199789-A1 Antireflective Coating Composition Based on Silicon Polymer MERCK PATENT GMBH (DE) 2008-08-21 US disclosed
US-20070298349-A1 Antireflective Coating Compositions Comprising Siloxane Polymer AZ ELECTRONIC MATERIALS USA CORP. 2007-12-27 US disclosed
WO-2007148223-A2 ANTIREFLECTIVE COATING COMPOSITIONS COMPRISING SILOXANE POLYMER AZ ELECTRONIC MATERIALS USA CORP. (DE) 2007-12-27 WO disclosed
EP-1641908-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2006-04-05 EP disclosed
WO-2004113486-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-29 WO disclosed
US-20040259761-A1 Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO., LTD. INTEL CORPORATION 2004-12-23 US disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 US disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 US disclosed