SCHEMBL3298969

SCHEMBL3298969

CCCCO[SiH2]OC(OCC)OCC

nearest known ligand 0.40

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
THRB P10828 1/20 0.40
ADRB2 P07550 1/20 0.31
ADRB1 P08588 1/20 0.31
ADRB3 P13945 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28449693 0.83 DNM1 (0.31) ADRB2ADRB1ADRB3
SCHEMBL3297260 0.83 HPGD (0.31) ADRB2ADRB1ADRB3
SCHEMBL3378895 0.74
SCHEMBL3297412 0.74 THRB (0.32) THRB
SCHEMBL705064 0.74 ADRB2 (0.45) THRBADRB2ADRB1ADRB3
SCHEMBL28994591 0.73 SMPD1 (0.32) ADRB2ADRB1ADRB3
SCHEMBL4305492 0.72
Hydrochloric Acid SCHEMBL10569892 0.71 ADRB2 (0.43) THRBADRB2ADRB1ADRB3
Bromide SCHEMBL9709838 0.71 ADRB2 (0.43) THRBADRB2ADRB1ADRB3
Butane SCHEMBL16827219 0.71 ADRB2 (0.43) THRBADRB2ADRB1ADRB3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110249004-B Polyimide precursor composition 东京应化工业株式会社 2022-07-19 CN disclosed
US-7736837-B2 Antireflective coating composition based on silicon polymer AZ ELECTRONIC MATERIALS USA CORP. (US) 2010-06-15 US disclosed
US-20100093969-A1 Process for making siloxane polymers ZHANG RUZHI 2010-04-15 US disclosed
EP-2132253-A1 PROCESS FOR MAKING SILOXANE POLYMERS AZ Electronic Materials USA Corp. (US) 2009-12-16 EP disclosed
EP-2129733-A2 ANTIREFLECTIVE COATING COMPOSITION BASED ON A SILICON POLYMER AZ Electronic Materials USA Corp. (US) 2009-12-09 EP disclosed
US-20090274974-A1 SPIN-ON GRADED K SILICON ANTIREFLECTIVE COATING AZ ELECTRONIC MATERIALS USA CORP. 2009-11-05 US disclosed
WO-2009133456-A1 SPIN-ON GRADED K SILICON ANTIREFLECTIVE COATING AZ ELECTRONIC MATERIALS USA CORP. (US) 2009-11-05 WO disclosed
EP-2035518-A2 ANTIREFLECTIVE COATING COMPOSITIONS COMPRISING SILOXANE POLYMER AZ Electronic Materials USA Corp. (US) 2009-03-18 EP disclosed
US-7442675-B2 Cleaning composition and method of cleaning semiconductor substrate TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-28 US disclosed
WO-2008104874-A1 PROCESS FOR MAKING SILOXANE POLYMERS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-09-04 WO disclosed
WO-2008102259-A2 ANTIREFLECTIVE COATING COMPOSITION BASED ON A SILICON POLYMER AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-08-28 WO disclosed
US-20080199789-A1 Antireflective Coating Composition Based on Silicon Polymer MERCK PATENT GMBH (DE) 2008-08-21 US disclosed
US-20070298349-A1 Antireflective Coating Compositions Comprising Siloxane Polymer AZ ELECTRONIC MATERIALS USA CORP. 2007-12-27 US disclosed
WO-2007148223-A2 ANTIREFLECTIVE COATING COMPOSITIONS COMPRISING SILOXANE POLYMER AZ ELECTRONIC MATERIALS USA CORP. (DE) 2007-12-27 WO disclosed
US-20040259761-A1 Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO., LTD. INTEL CORPORATION 2004-12-23 US disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 US disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 US disclosed