Known targets — ChEMBL curated mechanism
GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SLC22A1 | O15245 | 4/20 | 0.80 |
| ▸ | SLC22A2 | O15244 | 1/20 | 0.69 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.61 |
| ▸ | TP53 | P04637 | 1/20 | 0.61 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.61 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.61 |
| ▸ | TSHR | P16473 | 1/20 | 0.61 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.61 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.61 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.61 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.61 |
| ▸ | DNM1 | Q05193 | 7/20 | 0.55 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL3305454 | 1.00 | SLC22A1 (0.80) | SLC22A1SLC22A2ALDH1A1TP53CYP3A4 | |
| Tetrabuthylammonium SCHEMBL5718772 | 1.00 | SLC22A1 (0.80) | SLC22A1SLC22A2ALDH1A1TP53CYP3A4 | |
| Water SCHEMBL3304024 | 1.00 | SLC22A1 (0.80) | SLC22A1SLC22A2ALDH1A1TP53CYP3A4 | |
| Tetrabuthylammonium SCHEMBL11570272 | 0.97 | SLC22A1 (0.75) | SLC22A1SLC22A2ALDH1A1TP53CYP3A4 | |
| SCHEMBL2870319 | 0.97 | SLC22A1 (0.86) | SLC22A1SLC22A2ALDH1A1TP53CYP3A4 | |
| Tetrabuthylammonium SCHEMBL2522406 | 0.97 | SLC22A1 (0.86) | SLC22A1SLC22A2ALDH1A1TP53CYP3A4 | |
| SCHEMBL2870114 | 0.97 | SLC22A1 (0.86) | SLC22A1SLC22A2ALDH1A1TP53CYP3A4 | |
| SCHEMBL1684241 | 0.97 | SLC22A1 (0.86) | SLC22A1SLC22A2ALDH1A1TP53CYP3A4 | |
| Hydrochloric Acid SCHEMBL5091328 | 0.93 | SLC22A1 (0.80) | SLC22A1SLC22A2ALDH1A1TP53CYP3A4 | |
| Hydrochloric Acid SCHEMBL5087658 | 0.93 | SLC22A1 (0.80) | SLC22A1SLC22A2ALDH1A1TP53CYP3A4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119430216-A | Titanium-silicon molecular sieve and preparation method and application thereof | 中国石油化工股份有限公司 | 2025-02-14 | — | — | CN | claimed |
| CN-119430214-A | Eutectic titanium silicon molecular sieve and preparation method and application thereof | 中国石油化工股份有限公司 | 2025-02-14 | — | — | CN | claimed |
| CN-119430214-A | Eutectic titanium silicon molecular sieve and preparation method and application thereof | 中国石油化工股份有限公司 | 2025-02-14 | — | — | CN | disclosed |
| CN-119430216-A | Titanium-silicon molecular sieve and preparation method and application thereof | 中国石油化工股份有限公司 | 2025-02-14 | — | — | CN | disclosed |
| US-10304694-B2 | Semiconductor treatment composition and treatment method | JSR CORPORATION (JP) | 2019-05-28 | — | — | US | disclosed |
| US-20190122896-A1 | SEMICONDUCTOR TREATMENT COMPOSITION | JSR CORPORATION (JP) | 2019-04-25 | — | — | US | disclosed |
| CN-108395845-A | Semiconductor processes composition and processing method | JSR株式会社 | 2018-08-14 | — | — | CN | disclosed |
| US-20180226267-A1 | SEMICONDUCTOR TREATMENT COMPOSITION AND TREATMENT METHOD | JSR CORPORATION (JP) | 2018-08-09 | — | — | US | disclosed |
| US-9964851-B2 | Resist pattern forming method and developer for lithography | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-05-08 | — | — | US | disclosed |
| CN-105986308-B | Electrolyte composition for removing flash and method for removing flash | 化研科技株式会社 | 2018-04-13 | — | — | CN | disclosed |
| US-20170059994-A1 | RESIST PATTERN FORMING METHOD AND DEVELOPER FOR LITHOGRAPHY | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-03-02 | — | — | US | disclosed |
| US-7786022-B2 | Method for forming insulating film with low dielectric constant | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-08-31 | — | — | US | disclosed |
| US-20100099260-A1 | AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHNG AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE | JSR CORPORATION (JP) | 2010-04-22 | — | — | US | disclosed |
| EP-2131389-A1 | AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING AND CHEMICAL MECHANICAL POLISHING METHOD FOR SEMICONDUCTOR DEVICE | JSR Corporation (JP) | 2009-12-09 | — | — | EP | disclosed |
| US-20080290521-A1 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |
| US-20040077512-A1 | Cleaning agent for a semi-conductor substrate | WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) | 2004-04-22 | — | — | US | disclosed |
| US-6716803-B2 | HAVING COPPER WIRINGS ON ITS SURFACE, COMPRISING A NONIONIC SURFACTANT, ESPECIALLY A POLYOXYALKYLENE COMPOUNDS CONTAINING AN ACETYLENIC GROUP. | WAKO PURE CHEMCIAL INDUSTRIES, LTD. (JP) | 2004-04-06 | — | — | US | disclosed |
| US-6534458-B1 | This invention relates to a cleaning agent for a semi-conductor substrate, particularly, one having copper wirings on its surface, comprising a nonionic surfactant and a method for cleaning the same. control a speed of etching on | WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) | 2003-03-18 | — | — | US | disclosed |
| US-20020016272-A1 | Cleaning agent for a semi-conductor substrate | WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) | 2002-02-07 | — | — | US | disclosed |
| US-6310019-B1 | COMPRISING NONIONIC SURFACTANT; FOR CLEANING SURFACE HAVING COPPER WIRINGS; CORROSION RESISTANCE | WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) | 2001-10-30 | — | — | US | disclosed |