SCHEMBL330892

SCHEMBL330892

CC[N+](CC)(CC)Cc1ccccc1.Cc1ccc(S(=O)(=O)[O-])cc1

nearest known ligand 0.53

Known targets — ChEMBL curated mechanism

CHRM1CHRM2CHRM3CHRM4CHRM5SLC6A2dacAdacBdacCftsImrcAmrcBmrdA

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 3/20 0.53
CYP2D6 P10635 2/20 0.53
CYP3A4 P08684 2/20 0.53
MAPK1 P28482 1/20 0.53
THPO P40225 1/20 0.53
BCHE P06276 1/20 0.50
ACHE P22303 1/20 0.50
KCNH2 Q12809 2/20 0.47
CYP2C9 P11712 1/20 0.47
TSHR P16473 1/20 0.47
CYP2C19 P33261 1/20 0.47
HTT P42858 1/20 0.47
HIF1A Q16665 1/20 0.47
CYP1A2 P05177 2/20 0.46
CA12 O43570 2/20 0.46
CA9 Q16790 2/20 0.46
ATM Q13315 1/20 0.46
L3MBTL1 Q9Y468 1/20 0.46
MCHR1 Q99705 1/20 0.44
CNR2 P34972 6/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10860949 0.97 LMNA (0.53) LMNACYP2D6CYP3A4MAPK1THPO
SCHEMBL330932 0.92 LMNA (0.43) LMNACYP2D6CYP3A4MAPK1THPO
SCHEMBL11723030 0.92 CYP3A4 (0.50) LMNACYP2D6CYP3A4MAPK1THPO
SCHEMBL28368039 0.88 LMNA (0.48) LMNACYP2D6CYP3A4MAPK1THPO
SCHEMBL11241529 0.88 HTT (0.64) LMNACYP2D6CYP3A4MAPK1THPO
SCHEMBL11574807 0.86 LMNA (0.67) LMNACYP2D6CYP3A4MAPK1THPO
SCHEMBL2149541 0.86 BCHE (0.49) LMNACYP2D6CYP3A4MAPK1THPO
SCHEMBL331085 0.85 HTT (0.52) LMNACYP2D6CYP3A4MAPK1THPO
SCHEMBL331272 0.85 ALDH1A1 (0.57) LMNACYP2D6CYP3A4MAPK1THPO
Sulfuric Acid SCHEMBL2909993 0.85 CYP1A2 (0.46) LMNACYP2D6MAPK1BCHEACHE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20080196626-A1 High silicon-content resin composition used to form thin film thermosets; form low k dielectric constant materials; hard mask and underlayer materials with anti-reflective properties for photolithography industry MERCK PATENT GMBH (DE) 2008-08-21 US claimed
CN-112947000-B Composition for forming silicon-containing EUV resist underlayer film containing sulfonate 日产化学工业株式会社 2024-11-29 CN disclosed
US-10613440-B2 Silicon-containing EUV resist underlayer film-forming composition containing onium sulfonate NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2020-04-07 US disclosed
EP-2295484-B1 POLYMERIZABLE COMPOSITION FOR POLYTHIOURETHANE OPTICAL MATERIAL, POLYTHIOURETHANE OPTICAL MATERIAL OBTAINED FROM SAME POLYMERIZABLE COMPOSITION, AND POLYMERIZATION CATALYST FOR POLYTHIOURETHANE OPTICAL MATERIAL MITSUI CHEMICALS INC (JP) 2018-01-17 EP disclosed
EP-2407498-B1 Polymerizable composition for polythiourethane optical material, polythiourethane optical material obtained from the polymerizable composition, and polymerization catalyst for polythiourethane optical material MITSUI CHEMICALS INC (JP) 2017-11-15 EP disclosed
US-20150210829-A1 SILICON-CONTAINING EUV RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING ONIUM SULFONATE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-07-30 US disclosed
EP-2881794-A1 COMPOSITION FOR FORMING UNDERLAYER FILM FOR SILICON-CONTAINING EUV RESIST AND CONTAINING ONIUM SULFONATE Nissan Chemical Industries, Ltd. (JP) 2015-06-10 EP disclosed
US-8304507-B2 Polymerizable composition for polythiourethane optical material, polythiourethane optical material obtained from the polymerizable composition, and polymerization catalyst for polythiourethane optical material MITSUI CHEMICALS, INC. (JP) 2012-11-06 US disclosed
EP-2450412-A1 Silicone coating composition AZ Electronic Materials USA Corp. (US) 2012-05-09 EP disclosed
EP-2407498-A2 Polymerizable composition for polythiourethane optical material, polythiourethane optical material obtained from the polymerizable composition, and polymerization catalyst for polythiourethane optical material Mitsui Chemicals, Inc. (JP) 2012-01-18 EP disclosed
US-8026040-B2 High silicon-content resin composition used to form thin film thermosets; form low k dielectric constant materials; hard mask and underlayer materials with anti-reflective properties for photolithography industry AZ ELECTRONIC MATERIALS USA CORP. (US) 2011-09-27 US disclosed
US-20110112269-A1 POLYMERIZABLE COMPOSITION FOR POLYTHIOURETHANE OPTICAL MATERIAL, POLYTHIOURETHANE OPTICAL MATERIAL OBTAINED FROM THE POLYMERIZABLE COMPOSITION, AND POLYMERIZATION CATALYST FOR POLYTHIOURETHANE OPTICAL MATERIAL MITSUI CHEMICALS, INC. (JP) 2011-05-12 US disclosed
EP-2295484-A1 POLYMERIZABLE COMPOSITION FOR POLYTHIOURETHANE OPTICAL MATERIAL, POLYTHIOURETHANE OPTICAL MATERIAL OBTAINED FROM SAME POLYMERIZABLE COMPOSITION, AND POLYMERIZATION CATALYST FOR POLYTHIOURETHANE OPTICAL MATERIAL Mitsui Chemicals, Inc. (JP) 2011-03-16 EP disclosed
US-6727294-B2 RADIATION TRANSPARENT MOLDING MATERIALS MITSUBISHI ENGINEERING-PLASTICS CORPORATION (JP) 2004-04-27 US disclosed
US-20010034419-A1 Radiation transparent molding materials MITSUBISHI ENGINEERING-PLASTICS CORPORATION (JP) 2001-10-25 US disclosed
US-3966720-A Process for producing desacetoxy cephalosporanic acid compound NIKKEN CHEMICALS CO., LTD. (JA) 1976-06-29 US disclosed