Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.39 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.39 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL28320011 | 0.97 | ALDH1A1 (0.38) | ALDH1A1L3MBTL1TSHRTDP1 | |
| SCHEMBL682284 | 0.82 | ALDH1A1 (0.36) | ALDH1A1L3MBTL1TSHRTDP1 | |
| SCHEMBL4448952 | 0.81 | ALDH1A1 (0.39) | ALDH1A1L3MBTL1TSHRTDP1 | |
| SCHEMBL776627 | 0.81 | ALDH1A1 (0.39) | ALDH1A1L3MBTL1TSHRTDP1 | |
| SCHEMBL16110455 | 0.81 | ALDH1A1 (0.39) | ALDH1A1L3MBTL1TSHRTDP1 | |
| SCHEMBL12256268 | 0.80 | ALDH1A1 (0.35) | ALDH1A1L3MBTL1 | |
| SCHEMBL301944 | 0.79 | ALDH1A1 (0.47) | ALDH1A1L3MBTL1TSHRTDP1 | |
| SCHEMBL13107713 | 0.79 | ALDH1A1 (0.38) | ALDH1A1L3MBTL1TSHRTDP1 | |
| SCHEMBL18008301 | 0.78 | CA2 (0.37) | ALDH1A1L3MBTL1 | |
| SCHEMBL18008012 | 0.78 | CA2 (0.37) | ALDH1A1L3MBTL1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 122 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20030170561-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-09-11 | — | — | US | claimed |
| US-20240291009-A1 | METHOD FOR PURIFYING TREATMENT TARGET SOLUTION | AGC Inc. (JP) | 2024-08-29 | — | — | US | disclosed |
| EP-4417582-A1 | METHOD FOR PURIFYING TREATMENT TARGET SOLUTION | AGC Inc. (JP) | 2024-08-21 | — | — | EP | disclosed |
| CN-118176168-A | Method for purifying liquid to be treated | ＡＧＣ株式会社 | 2024-06-11 | — | — | CN | disclosed |
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20230333472-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-19 | — | — | US | disclosed |
| US-20230244149-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-08-03 | — | — | US | disclosed |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-27 | — | — | US | disclosed |
| WO-2023063339-A1 | METHOD FOR PURIFYING TREATMENT TARGET SOLUTION | ＡＧＣ株式会社 | 2023-04-20 | — | — | WO | disclosed |
| US-11121324-B2 | Dihetero amines in electrically conductive polymer compositions | LG CHEM, LTD. | 2021-09-14 | — | — | US | disclosed |
| EP-1736829-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2006-12-27 | — | — | EP | disclosed |
| EP-1726608-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2006-11-29 | — | — | EP | disclosed |
| US-20060234153-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-10-19 | — | — | US | disclosed |
| US-7108955-B2 | Polysiloxane, process for production thereof and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-09-19 | — | — | US | disclosed |
| US-20050171226-A1 | Radiation sensitive resin composition | JSR CORPORATION (JP) | 2005-08-04 | — | — | US | disclosed |
| EP-1557718-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2005-07-27 | — | — | EP | disclosed |
| US-20040143082-A1 | Polysiloxane, process for production thereof and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2004-07-22 | — | — | US | disclosed |
| EP-1398339-A1 | POLYSILOXANE, PROCESS FOR PRODUCTION THEREOF AND RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2004-03-17 | — | — | EP | disclosed |
| US-20030219680-A1 | Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams | JSR CORPORATION (JP) | 2003-11-27 | — | — | US | disclosed |
| US-20030170561-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2003-09-11 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11121324-B2 | Dihetero amines in electrically conductive polymer compositions | PARN, PARG, KCNH2 | ALDH1A1 3615/4885L3MBTL1 4521/4885TSHR 3277/4885 |
| US-11687000-B2 | Sulfonium compound, chemically amplified resist composition, and patterning process | ETV6, PKD1, PKD2 | ALDH1A1 3150/4885L3MBTL1 3765/4885TSHR 4142/4885 |
| US-20230333472-A1 | THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS | RPS4X, SIK3, MLX | ALDH1A1 4644/4885L3MBTL1 1564/4885TSHR 439/4885 |
| US-11914295-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | RPS4X, SIK3, MLX | ALDH1A1 4644/4885L3MBTL1 1564/4885TSHR 439/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.