SCHEMBL3329422

SCHEMBL3329422

CC(C)(C)OC(=O)Oc1ccc(C=CC=Cc2ccc(O)cc2)cc1

nearest known ligand 0.55

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ELANE P08246 3/20 0.55
STAT3 P40763 1/20 0.50
APP P05067 1/20 0.47
MIF P14174 1/20 0.44
BCHE P06276 2/20 0.44
MAPT P10636 4/20 0.43
ALDH1A1 P00352 2/20 0.43
KDM4E B2RXH2 1/20 0.43
MEN1 O00255 2/20 0.42
KMT2A Q03164 2/20 0.42
P4HB P07237 1/20 0.42
CALM1 P0DP23 1/20 0.42
RAB9A P51151 1/20 0.42
F3 P13726 1/20 0.42
XDH P47989 1/20 0.42
KDM1A O60341 1/20 0.42
CA12 O43570 1/20 0.41
CA1 P00915 1/20 0.41
CA2 P00918 1/20 0.41
TYR P14679 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3838392 0.90 ELANE (0.46) ELANESTAT3APPMIFBCHE
SCHEMBL2474025 0.88 ELANE (0.44) ELANESTAT3APPMIFBCHE
SCHEMBL4057059 0.87 ELANE (0.70) ELANEMIFMAPTKDM4EMEN1
4-Vinylphenol SCHEMBL3329424 0.85 ELANE (0.55) ELANEMIFBCHEMAPTALDH1A1
SCHEMBL8767557 0.84 ELANE (0.40) ELANESTAT3APPMIFBCHE
SCHEMBL8521546 0.84 ELANE (0.40) ELANESTAT3APPMIFBCHE
SCHEMBL3843081 0.80 KDM1A (0.39) ELANESTAT3MIFBCHEMAPT
SCHEMBL6843705 0.80 ELANE (0.38) ELANESTAT3APPMIFBCHE
SCHEMBL7708633 0.80 ELANE (0.66) ELANEMIFMAPTALDH1A1KDM4E
SCHEMBL4928930 0.80 THRB (0.58) ELANEMAPTALDH1A1KDM4EMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20100136477-A1 Photosensitive Composition AZ ELECTRONIC MATERIALS USA CORP. 2010-06-03 US disclosed
US-20080187868-A1 Photoactive Compounds AZ ELECTRONIC MATERIALS USA CORP. 2008-08-07 US disclosed
EP-1038890-B1 Dendritic polymers and their preparation SHINETSU CHEMICAL CO (JP) 2005-01-26 EP disclosed
EP-1039346-B1 Resist compositions and pattering process SHINETSU CHEMICAL CO (JP) 2004-05-26 EP disclosed
US-6686121-B2 WITHOUT PURIFYING RESIST MATERIALS FORMED BY REACTION, BY REACTING AN ALKALI-SOLUBLE POLYMER HAVING PHENOLIC HYDROXYL GROUPS OR CARBOXYL GROUP WITH A VINYL ETHER AND/OR DIALKYL CARBONATE IN CATALYST, APROTIC SOLVENT, ADDING ACID GENERATOR CLARIANT FINANCE (BVI) LIMITED (VG) 2004-02-03 US disclosed
EP-0942329-B1 NOVEL PROCESS FOR PREPARING RESISTS CLARIANT FINANCE BVI LTD (VG) 2002-11-13 EP disclosed
US-6455223-B1 COMPOSITION COMPRISING AS BASE RESIN DENDRITIC OR HYPERBRANCHED POLYMER OF PHENOL DERIVATIVE HAVING SPECIFIED WEIGHT AVERAGE MOLECULAR WEIGHT; HIGH RESOLUTION, HIGH SENSITIVITY, MINIMIZED LINE EDGE ROUGHNESS, ETCH RESISTANCE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-24 US disclosed
US-6414101-B1 DENDRITIC OR HYPERBRANCHED POLYMER OF HYDROXYSTYRENE DERIVATIVE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-07-02 US disclosed
US-20010024765-A1 Novel process for preparing resists MERCK PATENT GMBH (DE) 2001-09-27 US disclosed
EP-0814381-B1 Positive image forming composition FUJI PHOTO FILM CO LTD (JP) 2001-09-19 EP disclosed
US-5679500-A FORMING RESIST FILM BY USING A CHEMICAL AMPLIFICATION RESIST WHICH GENERATES AN ACID IN RESPONSE TO LASER LIGHT AND WHICH REACTS WITH THE ACID MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1997-10-21 US disclosed
US-5658711-A FORMING RESIST FILM CONTAINING BASE GENERATOR, GENERATING BASE BY RADIATION, FORMING METAL OXIDE FILM, ETCHING MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1997-08-19 US disclosed
EP-0440374-B1 Chemical amplified resist material WAKO PURE CHEM IND LTD (JP) 1997-04-16 EP disclosed
EP-0691674-A2 Method of forming micropatterns MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1996-01-10 EP disclosed
US-5468589-A Heat resistant, photosensitive patterns WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1995-11-21 US disclosed
US-5350660-A Chemical amplified resist material containing photosensitive compound capable of generating an acid and specific polystyrene copolymer having functional groups that become alkali-soluble under an acid atmosphere WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) 1994-09-27 US disclosed
EP-0595361-A2 Method of forming micropatterns MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 1994-05-04 EP disclosed
EP-0588544-A2 Fine pattern forming material and pattern formation process WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1994-03-23 EP disclosed
EP-0520642-A1 Resist material and pattern formation process WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1992-12-30 EP disclosed
EP-0440374-A2 Chemical amplified resist material WAKO PURE CHEMICAL INDUSTRIES LTD (JP) 1991-08-07 EP disclosed