SCHEMBL3339290

SCHEMBL3339290

Oc1cccc([SiH](O[SiH3])c2ccccc2)c1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 4/20 0.41
CA12 O43570 4/20 0.41
CA2 P00918 4/20 0.41
CA9 Q16790 4/20 0.41
CA14 Q9ULX7 3/20 0.41
ALDH1A1 P00352 2/20 0.41
LMNA P02545 1/20 0.41
CA5A P35218 1/20 0.41
HSD17B10 Q99714 1/20 0.41
CA5B Q9Y2D0 1/20 0.41
TSHR P16473 2/20 0.38
CA1 P00915 3/20 0.37
TDP1 Q9NUW8 2/20 0.37
GLA P06280 1/20 0.37
CA3 P07451 1/20 0.37
CA4 P22748 1/20 0.37
HSD17B1 P14061 4/20 0.36
HSD17B2 P37059 4/20 0.36
CA6 P23280 1/20 0.35
CYP2C9 P11712 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL35818 0.81 LTA4H (0.32) ALDH1A1TSHR
SCHEMBL573507 0.79 LTA4H (0.30) TSHR
SCHEMBL10699684 0.79 LTA4H (0.30) TSHR
SCHEMBL277910 0.73
SCHEMBL9351411 0.72 CA3 (0.42) CYP3A4CA12CA2CA9CA14
SCHEMBL8670159 0.69
Resorcinol SCHEMBL11667650 0.69 CA12 (0.75) CYP3A4CA12CA2CA9CA14
SCHEMBL1930451 0.68 LTA4H (0.50) CA2CA9TSHRCA1KMT2A
Resorcinol SCHEMBL1370736 0.66 CA12 (0.80) CYP3A4CA12CA2CA9CA14
Resorcinol SCHEMBL3449493 0.66 CA12 (0.80) CYP3A4CA12CA2CA9CA14

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6455416-B1 Developer soluble dyed BARC for dual damascene process ADVANCED MICRO DEVICES, INC. 2002-09-24 US claimed
US-9595670-B1 Resistive random access memory (RRAM) cell and method for forming the RRAM cell Crossbar, Inc. (US) 2017-03-14 US disclosed
US-8445372-B2 Selective silicide formation using resist etch back SPANSION LLC (US) 2013-05-21 US disclosed
US-20100099249-A1 SELECTIVE SILICIDE FORMATION USING RESIST ETCH BACK SPANSION LLC (US) 2010-04-22 US disclosed
US-7691751-B2 Selective silicide formation using resist etchback SPANSION LLC (US) 2010-04-06 US disclosed
US-20090111265-A1 SELECTIVE SILICIDE FORMATION USING RESIST ETCHBACK SPANSION LLC (US) 2009-04-30 US disclosed
WO-2009055384-A1 SELECTIVE SILICIDE FORMATION USING RESIST ETCH BACK SPANSION LLC (US) 2009-04-30 WO disclosed
US-7056646-B1 Use of base developers as immersion lithography fluid ADVANCED MICRO DEVICES, INC. (US) 2006-06-06 US disclosed
US-6861209-B2 Method to enhance resolution of a chemically amplified photoresist INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2005-03-01 US disclosed
US-20040106070-A1 Method to enhance resolution of a chemically amplified photoresist INTERNATIONAL BUSINESS MACHINES CORPORATION 2004-06-03 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6455416-B1 Developer soluble dyed BARC for dual damascene process ADVANCED MICRO DEVICES, INC. 2002-09-24 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed