SCHEMBL3340231

SCHEMBL3340231

CC(C)(O[SiH3])c1cccc(Oc2ccccc2)c1

nearest known ligand 0.58

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAOB P27338 1/20 0.44
LTA4H P09960 3/20 0.43
TSHR P16473 1/20 0.43
MAPK1 P28482 1/20 0.41
AKR1C3 P42330 1/20 0.41
CYP2C9 P11712 2/20 0.39
NPC1 O15118 1/20 0.39
POLB P06746 1/20 0.39
RAB9A P51151 1/20 0.39
PTGS1 P23219 1/20 0.39
CYP3A4 P08684 1/20 0.39
CYP2C19 P33261 1/20 0.39
ALDH1A1 P00352 2/20 0.38
ALOX15 P16050 1/20 0.38
MEN1 O00255 1/20 0.37
MITF O75030 1/20 0.37
GAA P10253 1/20 0.37
MAPT P10636 1/20 0.37
GFER P55789 1/20 0.37
KMT2A Q03164 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13310389 0.81 LTA4H (0.50) MAOBLTA4HTSHRMAPK1AKR1C3
SCHEMBL5671239 0.81 CYP2C9 (0.54) MAOBLTA4HTSHRMAPK1AKR1C3
SCHEMBL9347984 0.79 MAOB (0.48) MAOBLTA4HTSHRMAPK1AKR1C3
SCHEMBL48954 0.78 MAPK1 (0.64) TSHRMAPK1CYP3A4CYP2C19ALDH1A1
SCHEMBL548030 0.78 CETP (0.51) MAOBLTA4HTSHRAKR1C3CYP2C9
SCHEMBL20357547 0.77 MAOB (0.47) MAOBLTA4HTSHRAKR1C3CYP2C9
SCHEMBL24368144 0.75 NPC1 (0.60) MAOBLTA4HTSHRMAPK1AKR1C3
SCHEMBL26357628 0.75 MAOB (0.44) MAOBLTA4HTSHRAKR1C3CYP2C9
SCHEMBL10786621 0.75 LTA4H (0.52) MAOBLTA4HTSHRAKR1C3PTGS1
SCHEMBL18118971 0.74 CYP3A4 (0.59) MAOBMAPK1CYP2C9NPC1POLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8968458-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2015-03-03 US disclosed
US-8808446-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2014-08-19 US disclosed
US-20100151384-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2010-06-17 US disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed