Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CETP | P11597 | 1/20 | 0.51 |
| ▸ | AKR1C3 | P42330 | 1/20 | 0.47 |
| ▸ | MAOB | P27338 | 1/20 | 0.47 |
| ▸ | LTA4H | P09960 | 3/20 | 0.46 |
| ▸ | TSHR | P16473 | 1/20 | 0.46 |
| ▸ | NR1H2 | P55055 | 3/20 | 0.46 |
| ▸ | NR1H3 | Q13133 | 2/20 | 0.46 |
| ▸ | PTGS1 | P23219 | 1/20 | 0.45 |
| ▸ | NPC1 | O15118 | 1/20 | 0.44 |
| ▸ | POLB | P06746 | 1/20 | 0.44 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.44 |
| ▸ | RAB9A | P51151 | 1/20 | 0.44 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.42 |
| ▸ | BAX | Q07812 | 1/20 | 0.42 |
| ▸ | ACSS2 | Q9NR19 | 1/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.41 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.41 |
| ▸ | MEN1 | O00255 | 1/20 | 0.41 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL548657 | 0.94 | NR1H2 (0.49) | CETPAKR1C3MAOBNR1H2NR1H3 | |
| SCHEMBL548388 | 0.91 | NPC1 (0.47) | CETPAKR1C3NR1H2NR1H3NPC1 | |
| SCHEMBL548150 | 0.89 | NR1H2 (0.46) | CETPAKR1C3MAOBNR1H2NR1H3 | |
| SCHEMBL548698 | 0.86 | LTA4H (0.48) | CETPAKR1C3MAOBLTA4HTSHR | |
| SCHEMBL13310389 | 0.84 | LTA4H (0.50) | AKR1C3MAOBLTA4HTSHRPTGS1 | |
| SCHEMBL5671239 | 0.84 | CYP2C9 (0.54) | AKR1C3MAOBLTA4HTSHRPTGS1 | |
| SCHEMBL9347984 | 0.82 | MAOB (0.48) | AKR1C3MAOBLTA4HTSHRPTGS1 | |
| SCHEMBL7319456 | 0.82 | AKR1C3 (0.50) | AKR1C3MAOBPTGS1NPC1POLB | |
| SCHEMBL547992 | 0.82 | LTA4H (0.52) | LTA4HTSHRNR1H2NPC1POLB | |
| SCHEMBL10386424 | 0.81 | AKR1C3 (0.45) | CETPAKR1C3MAOBLTA4HTSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 96 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| EP-3062151-B1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-05-05 | — | — | EP | disclosed |
| EP-3279728-B1 | RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-17 | — | — | EP | disclosed |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-12-31 | — | — | US | disclosed |
| US-10816898-B2 | — | — | 2020-10-27 | — | — | US | disclosed |
| US-20200262787-A1 | OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2020-08-20 | — | — | US | disclosed |
| EP-3279190-B1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN | MITSUBISHI GAS CHEMICAL CO (JP) | 2020-08-12 | — | — | EP | disclosed |
| EP-2080750-B1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL CO (JP) | 2020-07-29 | — | — | EP | disclosed |
| US-7871751-B2 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2011-01-18 | — | — | US | disclosed |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2010-02-25 | — | — | US | disclosed |
| EP-2080750-A1 | RADIATION-SENSITIVE COMPOSITION | Mitsubishi Gas Chemical Company, Inc. (JP) | 2009-07-22 | — | — | EP | disclosed |
| US-20080153031-A1 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2008-06-26 | — | — | US | disclosed |
| US-7323284-B2 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2008-01-29 | — | — | US | disclosed |
| EP-1739485-A1 | RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2007-01-03 | — | — | EP | disclosed |
| US-20030022095-A1 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2003-01-30 | — | — | US | disclosed |
| EP-0531715-B1 | Process for producing alcohols and ketones | SUMITOMO CHEMICAL CO (JP) | 1997-11-05 | — | — | EP | disclosed |
| US-5426237-A | Oxidation of straight, branched or cyclic alkanes and benzene derivatives in presence of transition metal catalyst and aldehyde | SUMITOMO CHEMICAL CO., LTD. (JP) | 1995-06-20 | — | — | US | disclosed |
| EP-0531715-A1 | Process for producing alcohols and ketones | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 1993-03-17 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | CETP 508/4885AKR1C3 4503/4885MAOB 4551/4885 |
| US-20200409261-A1 | COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD | C9, C1R, RAD51 | CETP 517/4885AKR1C3 136/4885MAOB 3954/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | CETP 565/4885AKR1C3 202/4885MAOB 3654/4885 |
| US-20200262787-A1 | OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF | TERB1, C5, TERT | CETP 1952/4885AKR1C3 1904/4885MAOB 2121/4885 |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | C1S, C9, RAD51 | CETP 2904/4885AKR1C3 973/4885MAOB 1664/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | CETP 565/4885AKR1C3 202/4885MAOB 3654/4885 |
| US-10816898-B2 | — | C5, C9, H1-0 | CETP 3748/4885AKR1C3 24/4885MAOB 3809/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.