⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1556224 | 0.65 | DAO (0.35) | — | |
| SCHEMBL1375632 | 0.65 | DAO (0.35) | — | |
| SCHEMBL630634 | 0.65 | HDAC6 (0.41) | — | |
| SCHEMBL5405555 | 0.63 | DAO (0.33) | — | |
| SCHEMBL30659527 | 0.62 | — | — | |
| Hydrochloric Acid SCHEMBL7988951 | 0.62 | HDAC6 (0.40) | — | |
| SCHEMBL31512727 | 0.61 | — | — | |
| SCHEMBL4966261 | 0.61 | AURKA (0.37) | — | |
| SCHEMBL28399974 | 0.61 | DAO (0.32) | — | |
| SCHEMBL2180074 | 0.61 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20070077750-A1 | ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS | APPLIED MATERIALS, INC. | 2007-04-05 | — | — | US | claimed |
| US-20070054487-A1 | ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS | APPLIED MATERIALS, INC. | 2007-03-08 | — | — | US | claimed |
| US-10784157-B2 | Doped tantalum nitride for copper barrier applications | APPLIED MATERIALS, INC. (US) | 2020-09-22 | — | — | US | disclosed |
| US-20170194204-A1 | IMPROVED THROUGH SILICON VIA | ULTRATECH, INC. (US) | 2017-07-06 | — | — | US | disclosed |
| US-9418890-B2 | Method for tuning a deposition rate during an atomic layer deposition process | APPLIED MATERIALS, INC. (US) | 2016-08-16 | — | — | US | disclosed |
| US-9032906-B2 | Apparatus and process for plasma-enhanced atomic layer deposition | APPLIED MATERIALS, INC. (US) | 2015-05-19 | — | — | US | disclosed |
| US-20140248772-A1 | METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS | APPLIED MATERIALS, INC. (US) | 2014-09-04 | — | — | US | disclosed |
| US-8722912-B2 | Metal complex compound and process for producing amides utilizing the metal complex compound | NATIONAL UNIVERSITY CORPORATION OKAYAMA UNIVERSITY (JP) | 2014-05-13 | — | — | US | disclosed |
| US-8491967-B2 | In-situ chamber treatment and deposition process | APPLIED MATERIALS, INC. (US) | 2013-07-23 | — | — | US | disclosed |
| US-20130140698-A1 | Doped Tantalum Nitride for Copper Barrier Applications | APPLIED MATERIALS, INC. | 2013-06-06 | — | — | US | disclosed |
| WO-2013082370-A1 | DOPED TANTALUM NITRIDE FOR COPPER BARRIER APPLICATIONS | APPLIED MATERIALS, INC. (US) | 2013-06-06 | — | — | WO | disclosed |
| US-20070128864-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-06-07 | — | — | US | disclosed |
| US-20070128863-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-06-07 | — | — | US | disclosed |
| US-20070128862-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-06-07 | — | — | US | disclosed |
| US-20070119371-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-05-31 | — | — | US | disclosed |
| US-20070119370-A1 | APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION | APPLIED MATERIALS, INC. | 2007-05-31 | — | — | US | disclosed |
| US-20070077750-A1 | ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS | APPLIED MATERIALS, INC. | 2007-04-05 | — | — | US | disclosed |
| US-20070077750-A1 | ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS | APPLIED MATERIALS, INC. | 2007-04-05 | — | — | US | disclosed |
| US-20070054487-A1 | ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS | APPLIED MATERIALS, INC. | 2007-03-08 | — | — | US | disclosed |
| US-20070054487-A1 | ATOMIC LAYER DEPOSITION PROCESSES FOR RUTHENIUM MATERIALS | APPLIED MATERIALS, INC. | 2007-03-08 | — | — | US | disclosed |