⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Tetramethylammonium Ion SCHEMBL3344685 | 1.00 | — | — | |
| Tetramethylammonium Ion SCHEMBL391303 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL63730 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL4847781 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL4151391 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL28467728 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL5493226 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL4151389 | 0.91 | — | — | |
| Tetramethylammonium Ion SCHEMBL4079605 | 0.89 | — | — | |
| Tetramethylammonium Ion SCHEMBL12020273 | 0.89 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 60 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-104593776-A | Chemical mechanical polishing liquid for titanium | SHANGHAI XIN ANNA ELECTRONIC TECHNOLOGY CO LTD | 2015-05-06 | — | — | CN | claimed |
| CN-103897603-A | GST neutral chemical mechanical polishing solution | SHANGHAI XIN ANNA ELECTRONIC TECHNOLOGY CO LTD | 2014-07-02 | — | — | CN | claimed |
| CN-101586005-A | Chemical-mechanical polishing solution for SiSb based phase-changing materials | SHANGHAI INST MICROSYS & INF (CN) | 2009-11-25 | — | — | CN | claimed |
| US-7497966-B2 | Chemical mechanical polishing slurry composition for shallow trench isolation process of semiconductor | HANWHA CHEMICAL CORPORATION (KR) | 2009-03-03 | — | — | US | claimed |
| CN-101372606-A | Sulfur compound phase-change material cerium oxide chemico-mechanical polishing solution | SHANGHAI INST MICROSYS & INF (CN) | 2009-02-25 | — | — | CN | claimed |
| US-20070220813-A1 | Chemical Mechanical Polishing Slurry Composition for Shallow Trench Isolation Process of Semiconductor | HANWHA CHEMICAL CORPORATION (KR) | 2007-09-27 | — | — | US | claimed |
| WO-2006004258-A1 | CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION FOR SHALLOW TRENCH ISOLATION PROCESS OF SEMICONDUCTOR | HANWHA CHEMICAL CORPORATION (KR) | 2006-01-12 | — | — | WO | claimed |
| CN-1274696-A | Solid concrete water reducing agent and its preparation | UNIV SICHUAN (CN) | 2000-11-29 | — | — | CN | claimed |
| US-20230406879-A1 | METHOD FOR SYNTHESIZING PEPTIDE CONTAINING N-SUBSTITUTED AMINO ACID | CHUGAI SEIYAKU KABUSHIKI KAISHA (JP) | 2023-12-21 | — | — | US | disclosed |
| US-11787836-B2 | Method for synthesizing peptide containing N-substituted amino acid | CHUGAI SEIYAKU KABUSHIKI KAISHA (JP) | 2023-10-17 | — | — | US | disclosed |
| US-20230138226-A1 | METHOD FOR SYNTHESIZING PEPTIDE CONTAINING N-SUBSTITUTED AMINO ACID | CHUGAI SEIYAKU KABUSHIKI KAISHA (JP) | 2023-05-04 | — | — | US | disclosed |
| US-20230096766-A1 | AMINO ACID HAVING FUNCTIONAL GROUP CAPABLE OF INTERMOLECULAR HYDROGEN BONDING, PEPTIDE COMPOUND CONTAINING SAME AND METHOD FOR PRODUCTION THEREOF | CHUGAI SEIYAKU KABUSHIKI KAISHA (JP) | 2023-03-30 | — | — | US | disclosed |
| US-11542299-B2 | Method for synthesizing peptide containing N-substituted amino acid | CHUGAI SEIYAKU KABUSHIKI KAISHA (JP) | 2023-01-03 | — | — | US | disclosed |
| EP-3896056-A1 | AMINO ACID HAVING FUNCTIONAL GROUP CAPABLE OF INTERMOLECULAR HYDROGEN BONDING, PEPTIDE COMPOUND CONTAINING SAME AND METHOD FOR PRODUCTION THEREOF | CHUGAI SEIYAKU KABUSHIKI KAISHA (JP) | 2021-10-20 | — | — | EP | disclosed |
| US-20070220813-A1 | Chemical Mechanical Polishing Slurry Composition for Shallow Trench Isolation Process of Semiconductor | HANWHA CHEMICAL CORPORATION (KR) | 2007-09-27 | — | — | US | disclosed |
| CN-101031512-A | Method for producing metal oxide sol | NISSAN CHEMICAL IND LTD (JP) | 2007-09-05 | — | — | CN | disclosed |
| WO-2006004258-A1 | CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION FOR SHALLOW TRENCH ISOLATION PROCESS OF SEMICONDUCTOR | HANWHA CHEMICAL CORPORATION (KR) | 2006-01-12 | — | — | WO | disclosed |
| CN-1604778-A | Cis-imidazolines as MDM2 inhibitors | HOFFMANN LA ROCHE (CH) | 2005-04-06 | — | — | CN | disclosed |
| US-20020103328-A1 | Aromatic polycarbonate composition, production process therefor and molded product thereof | TEIJIN LIMITED | 2002-08-01 | — | — | US | disclosed |
| EP-0431086-B1 | HYBRIDIZATION PROMOTION REAGENTS | VYSIS INC (US) | 1997-05-28 | — | — | EP | disclosed |