SCHEMBL33512

SCHEMBL33512

O[Si](O)(O)O.[P]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11059242 0.91
SCHEMBL2471032 0.91
SCHEMBL5886597 0.91
SCHEMBL238037 0.91
SCHEMBL2122361 0.91
SCHEMBL5445951 0.91
SCHEMBL11497420 0.91
SCHEMBL8425118 0.89
SCHEMBL1170 0.89
SCHEMBL6264766 0.89

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 6008 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12628334-B2 Semiconductor devices SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-05-12 US claimed
US-12596043-B2 Pressure sensor and manufacturing method for the same INVENSENSE, INC. (US) 2026-04-07 US claimed
US-20260075797-A1 SEMICONDUCTOR MEMORY DEVICE SAMSUNG ELECTRONICS CO LTD (KR) 2026-03-12 US claimed
EP-4709075-A1 SEMICONDUCTOR MEMORY DEVICE Samsung Electronics Co., Ltd. (KR) 2026-03-11 EP claimed
US-20260068280-A1 INTEGRATED CIRCUIT DEVICE WITH GATE ANTI-TYPE DOPED REGION TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2026-03-05 US claimed
US-20260052670-A1 SEMICONDUCTOR MEMORY DEVICES SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-02-19 US claimed
US-20260025971-A1 ADVANCED 3D MEMORY CELLS AND ARRAY ARCHITECTURES AND PROCESSES NEO SEMICONDUCTOR INC (US) 2026-01-22 US claimed
US-20250324659-A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF KABUSHIKI KAISHA TOSHIBA (JP) 2025-10-16 US claimed
US-20250285929-A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE RENESAS ELECTRONICS CORPORATION (JP) 2025-09-11 US claimed
US-20250273616-A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE RENESAS ELECTRONICS CORPORATION (JP) 2025-08-28 US claimed
US-4461072-A Method for preparing an insulated gate field effect transistor FUJITSU LIMITED (JP) 1984-07-24 US claimed
US-4410375-A Method for fabricating a semiconductor device TOKYO SHIBAURA DENKI KABUSHIKI KAISHA (JP) 1983-10-18 US claimed
US-4406053-A Process for manufacturing a semiconductor device having a non-porous passivation layer FUJITSU LIMITED (JP) 1983-09-27 US claimed
EP-0015064-B1 PROCESS FOR PRODUCING BIPOLAR SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 1983-08-17 EP claimed
US-4396934-A PHOSPHORUS SILICATE GLASS LAYER SANYO ELECTRIC CO., LTD. (JP) 1983-08-02 US claimed
EP-0045593-A2 Process for producing semiconductor device FUJITSU LIMITED (JP) 1982-02-10 EP claimed
EP-0003231-B1 MIS FIELD EFFECT TRANSISTOR WITH SHORT CHANNEL LENGTH AND METHOD OF MAKING THE SAME SIEMENS AKTIENGESELLSCHAFT (DE) 1981-10-14 EP claimed
US-4290188-A Process for producing bipolar semiconductor device utilizing predeposition of dopant and a polycrystalline silicon-gold film followed by simultaneous diffusion FUJITSU LIMITED (JP) 1981-09-22 US claimed
EP-0015064-A1 Process for producing bipolar semiconductor device FUJITSU LIMITED (JP) 1980-09-03 EP claimed
US-4009058-A Method of fabricating large area, high voltage PIN photodiode devices RCA CORPORATION (US) 1977-02-22 US claimed