SCHEMBL3364065

SCHEMBL3364065

OC(CC1CC2C=CC1C2)C(F)(F)F

nearest known ligand 0.37

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 7/20 0.37
ALDH1A1 P00352 3/20 0.37
IDO1 P14902 1/20 0.36
TDO2 P48775 1/20 0.36
MEN1 O00255 2/20 0.35
KMT2A Q03164 2/20 0.35
CYP1A2 P05177 1/20 0.35
CYP3A4 P08684 1/20 0.35
CYP2D6 P10635 1/20 0.35
CYP2C19 P33261 1/20 0.35
ATM Q13315 1/20 0.35
TSHR P16473 1/20 0.33
TDP1 Q9NUW8 1/20 0.31
HTT P42858 1/20 0.31
PKM P14618 1/20 0.30
CETP P11597 1/20 0.30
LMNA P02545 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL24355085 0.81 KDM4E (0.39) KDM4EALDH1A1IDO1TDO2MEN1
SCHEMBL14423159 0.79 KDM4E (0.33) KDM4EALDH1A1MEN1KMT2ACYP1A2
SCHEMBL10946796 0.79 KDM4E (0.42) KDM4EALDH1A1IDO1TDO2MEN1
SCHEMBL13532352 0.79 KDM4E (0.40) KDM4EALDH1A1IDO1TDO2MEN1
SCHEMBL15922747 0.76 KDM4E (0.45) KDM4EALDH1A1IDO1TDO2MEN1
SCHEMBL1977356 0.76 KDM4E (0.45) KDM4EALDH1A1IDO1TDO2MEN1
SCHEMBL14117842 0.76 KDM4E (0.43) KDM4EALDH1A1IDO1TDO2MEN1
SCHEMBL12256142 0.75 KDM4E (0.42) KDM4EALDH1A1IDO1TDO2MEN1
SCHEMBL3363553 0.75 KDM4E (0.41) KDM4EALDH1A1IDO1TDO2MEN1
SCHEMBL19689430 0.74 KDM4E (0.44) KDM4EALDH1A1IDO1TDO2MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1164434-B1 Radiation-sensitive resin composition JSR CORP (JP) 2010-10-06 EP disclosed
EP-1183571-B1 FLUORINATED PHOTORESISTS AND PROCESSES FOR MICROLITHOGRAPHY DU PONT (US) 2010-06-02 EP disclosed
US-7700262-B2 Top coat material and use thereof in lithography processes INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2010-04-20 US disclosed
US-7638261-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-12-29 US disclosed
US-20090148790-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2009-06-11 US disclosed
US-7521169-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-04-21 US disclosed
US-20080166568-A1 TOP COAT MATERIAL AND USE THEREOF IN LITHOGRAPHY PROCESSES INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-07-10 US disclosed
US-7335456-B2 Top coat material and use thereof in lithography processes INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-02-26 US disclosed
US-7335456-B2 Top coat material and use thereof in lithography processes INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-02-26 US disclosed
US-20080038676-A1 TOP COAT MATERIAL AND USE THEREOF IN LITHOGRAPHY PROCESSES INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-02-14 US disclosed
US-20040072094-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2004-04-15 US disclosed
US-6677419-B1 REACTING STOICHIOMETRIC EXCESS OF UNSATURATED ALICYCLIC MONOMER WITH ANOTHER UNSATURATED MONOMER, HAVING LESS THAN TWO ELECTRON-WITHDRAWING GROUPS APPENDED TO UNSATURATION, IN PRESENCE OF FREE RADICAL INITIATOR INTERNATIONAL BUSINESS MACHINES CORPORATION 2004-01-13 US disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed
US-6623907-B2 Chemical amplified photoresist JSR CORPORATION (JP) 2003-09-23 US disclosed
US-20020058201-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-05-16 US disclosed
EP-1193558-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-04-03 EP disclosed
US-20020009668-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-24 US disclosed
EP-1164434-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 EP disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 EP disclosed