SCHEMBL3367455

SCHEMBL3367455

CC(OC(=O)C1(C)CC2C=CC1C2)OC1CCCCC1

nearest known ligand 0.32

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
P2RX7 Q99572 1/20 0.32
CETP P11597 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1451694 0.81 P2RX7 (0.35) P2RX7CETP
SCHEMBL3367328 0.80 P2RX7 (0.37) P2RX7CETP
SCHEMBL5184481 0.80 P2RX7 (0.37) P2RX7CETP
SCHEMBL3364369 0.78 CYP2D6 (0.35) P2RX7CETP
SCHEMBL5356721 0.75
SCHEMBL1451757 0.75 CYP2D6 (0.36) P2RX7CETP
SCHEMBL5347786 0.73 P2RX7 (0.35) P2RX7CETP
SCHEMBL472019 0.73 P2RX7 (0.35) P2RX7CETP
SCHEMBL5186802 0.72 CYP2D6 (0.36) P2RX7CETP
SCHEMBL5359484 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1164434-B1 Radiation-sensitive resin composition JSR CORP (JP) 2010-10-06 EP disclosed
US-7202016-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2007-04-10 US disclosed
US-7078148-B2 Photoresist with improved sensitivity and resolution to deep ultraviolet rays/excimer lasers; semiconductors; integrated circuits JSR CORPORATION (JP) 2006-07-18 US disclosed
US-6964840-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-11-15 US disclosed
US-20050214680-A1 Radiation-sensitive resin composition MIYAJI MASAAKI 2005-09-29 US disclosed
US-6933094-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-08-23 US disclosed
US-20040241580-A1 Radiation-sensitive resin composition NISHIMURA YUKIO (JP) 2004-12-02 US disclosed
US-6800414-B2 FLUOROPOLYMER JSR CORPORATION (JP) 2004-10-05 US disclosed
US-6753124-B2 AMPLIFIED POSITIVE PHOTORESISTS JSR CORPORATION (JP) 2004-06-22 US disclosed
US-20040072094-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2004-04-15 US disclosed
EP-1193558-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-04-03 EP disclosed
US-20020009667-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-24 US disclosed
US-20020009668-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-24 US disclosed
EP-1164434-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 EP disclosed
EP-1162506-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-12 EP disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 EP disclosed
US-6180316-B1 SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS JSR CORPORATION (JP) 2001-01-30 US disclosed
EP-1048983-A1 Radiation sensitive resin composition JSR Corporation (JP) 2000-11-02 EP disclosed
EP-0930541-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-07-21 EP disclosed