SCHEMBL3364369

SCHEMBL3364369

CCOC(C)OC(=O)C1(C)CC2C=CC1C2

nearest known ligand 0.35

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
CYP2D6 P10635 1/20 0.35
CYP2C19 P33261 1/20 0.35
CETP P11597 1/20 0.34
P2RX7 Q99572 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1451757 0.83 CYP2D6 (0.36) CYP2D6CYP2C19CETPP2RX7
SCHEMBL5184481 0.83 P2RX7 (0.37) CYP2D6CYP2C19CETPP2RX7
SCHEMBL3367328 0.83 P2RX7 (0.37) CYP2D6CYP2C19CETPP2RX7
SCHEMBL5186802 0.81 CYP2D6 (0.36) CYP2D6CYP2C19CETPP2RX7
SCHEMBL200228 0.80 CYP2C19 (0.40) CYP2D6CYP2C19CETPP2RX7
SCHEMBL3367455 0.78 P2RX7 (0.32) CETPP2RX7
SCHEMBL4603860 0.77 P2RX7 (0.33) CYP2D6CYP2C19CETPP2RX7
SCHEMBL21593888 0.77 PRKCA (0.40) CYP2D6CYP2C19CETPP2RX7
SCHEMBL6827829 0.76 P2RX7 (0.34) CYP2D6CYP2C19CETPP2RX7
SCHEMBL472019 0.76 P2RX7 (0.35) CYP2D6CYP2C19CETPP2RX7

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1164434-B1 Radiation-sensitive resin composition JSR CORP (JP) 2010-10-06 EP disclosed
US-7202016-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2007-04-10 US disclosed
US-7078148-B2 Photoresist with improved sensitivity and resolution to deep ultraviolet rays/excimer lasers; semiconductors; integrated circuits JSR CORPORATION (JP) 2006-07-18 US disclosed
US-6964840-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-11-15 US disclosed
US-20050214680-A1 Radiation-sensitive resin composition MIYAJI MASAAKI 2005-09-29 US disclosed
US-6933094-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-08-23 US disclosed
US-20040241580-A1 Radiation-sensitive resin composition NISHIMURA YUKIO (JP) 2004-12-02 US disclosed
US-6800414-B2 FLUOROPOLYMER JSR CORPORATION (JP) 2004-10-05 US disclosed
US-6753124-B2 AMPLIFIED POSITIVE PHOTORESISTS JSR CORPORATION (JP) 2004-06-22 US disclosed
US-20040072094-A1 Radiation sensitive resin composition JSR CORPORATION (JP) 2004-04-15 US disclosed
EP-1193558-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-04-03 EP disclosed
US-20020009668-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-24 US disclosed
US-20020009667-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-01-24 US disclosed
EP-1164434-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-19 EP disclosed
EP-1162506-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-12-12 EP disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 EP disclosed
US-6180316-B1 SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS JSR CORPORATION (JP) 2001-01-30 US disclosed
EP-1048983-A1 Radiation sensitive resin composition JSR Corporation (JP) 2000-11-02 EP disclosed
EP-0930541-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-07-21 EP disclosed