SCHEMBL3382476

SCHEMBL3382476

Cl[Si](Cl)(Cl)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GRIN2D O15399 5/20 0.38
GRIN3B O60391 5/20 0.38
GRIN1 Q05586 5/20 0.38
GRIN2A Q12879 5/20 0.38
GRIN2B Q13224 5/20 0.38
GRIN2C Q14957 5/20 0.38
GRIN3A Q8TCU5 5/20 0.38
LMNA P02545 2/20 0.38
SLC22A2 O15244 2/20 0.38
SLC47A1 Q96FL8 2/20 0.38
SLC22A1 O15245 1/20 0.38
TSHR P16473 1/20 0.38
NFKB1 P19838 1/20 0.38
STAT6 P42226 1/20 0.38
SIGMAR1 Q99720 1/20 0.38
POLB P06746 1/20 0.36
THRB P10828 1/20 0.36
BLM P54132 1/20 0.36
PMP22 Q01453 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3801825 0.81 GRIN2D (0.38) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL3996121 0.71
SCHEMBL3162831 0.69 GRIN2D (0.38) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL14247631 0.69 GRIN2D (0.38) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL7391547 0.69 GRIN2D (0.39) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL18624167 0.67 GRIN2D (0.33) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL13506157 0.67
SCHEMBL31254406 0.67 SIGMAR1 (0.42) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL5820091 0.67 GRIN2D (0.36) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B
SCHEMBL4999768 0.65 GRIN2D (0.36) GRIN2DGRIN3BGRIN1GRIN2AGRIN2B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
JP-2006526672-A 2006-11-24 JP claimed
US-20060180900-A1 Organo-silsesquioxane polymers for forming low-k dielectrics SILECS OY (FI) 2006-08-17 US claimed
WO-2004090019-A1 ORGANO-SILSESQUIOXANE POLYMERS FOR FORMING LOW-K DIELECTRICS SILECS OY (FI) 2004-10-21 WO claimed
CN-114055975-B Ink jet recording method and ink jet recording apparatus 精工爱普生株式会社 2023-05-12 CN disclosed
US-20100317766-A1 Optical Composite Material And Optical Device Using the Same KONICA MINOLTA OPTO, INC. (JP) 2010-12-16 US disclosed
EP-1711550-B1 ADAMANTYL MONOMERS AND POLYMERS FOR LOW-K-DIELECTRIC APPLICATIONS SILECS OY (FI) 2010-12-01 EP disclosed
US-7622399-B2 Method of forming low-k dielectrics using a rapid curing process SILECS OY (FI) 2009-11-24 US disclosed
US-7622399-B2 Method of forming low-k dielectrics using a rapid curing process SILECS OY (FI) 2009-11-24 US disclosed
US-20090278254-A1 Dielectric materials and methods for integrated circuit applications SILECS OY (FI) 2009-11-12 US disclosed
US-20090278254-A1 Dielectric materials and methods for integrated circuit applications SILECS OY (FI) 2009-11-12 US disclosed
US-7514709-B2 Organo-silsesquioxane polymers for forming low-k dielectrics SILECS OY (FI) 2009-04-07 US disclosed
US-20070063188-A1 Low-k dielectric material SILECS OY (FI) 2007-03-22 US disclosed
US-20070063188-A1 Low-k dielectric material SILECS OY (FI) 2007-03-22 US disclosed
EP-1711550-A1 ADAMANTYL MONOMERS AND POLYMERS FOR LOW-K-DIELECTRIC APPLICATIONS Silecs OY (FI) 2006-10-18 EP disclosed
US-20060180900-A1 Organo-silsesquioxane polymers for forming low-k dielectrics SILECS OY (FI) 2006-08-17 US disclosed
WO-2005061587-A1 ADAMANTYL MONOMERS AND POLYMERS FOR LOW-K-DIELECTRIC APPLICATIONS SILECS OY (FI) 2005-07-07 WO disclosed
US-20050064726-A1 Method of forming low-k dielectrics SILECS OY (FI) 2005-03-24 US disclosed
US-20050032357-A1 Dielectric materials and methods for integrated circuit applications SILECS OY (FI) 2005-02-10 US disclosed
WO-2004090019-A1 ORGANO-SILSESQUIOXANE POLYMERS FOR FORMING LOW-K DIELECTRICS SILECS OY (FI) 2004-10-21 WO disclosed
US-6348240-B1 Methods for and products of modification and metallization of oxidizable surfaces, including diamond surfaces, by plasma oxidation THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY 2002-02-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070063188-A1 Low-k dielectric material KCNH3, KCNH2, KCNN3 GRIN2D 309/4885GRIN3B 486/4885GRIN1 366/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.