SCHEMBL3402156

SCHEMBL3402156

NCC[Si](Oc1ccccc1)(Oc1ccccc1)O[Si](CCN)(Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TAAR1 Q96RJ0 2/20 0.43
LTA4H P09960 2/20 0.38
PLA2G2A P14555 1/20 0.38
HRH1 P35367 1/20 0.36
MAOA P21397 1/20 0.34
AOC3 Q16853 1/20 0.34
LOXL2 Q9Y4K0 2/20 0.33
CYP2A6 P11509 1/20 0.33
HTR2A P28223 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
TSHR P16473 1/20 0.33
KCNA3 P22001 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6698560 0.91 TAAR1 (0.46) TAAR1LTA4HPLA2G2AHRH1AOC3
SCHEMBL305461 0.79 TAAR1 (0.43) TAAR1LTA4HPLA2G2AHRH1MAOA
SCHEMBL6696698 0.78 TAAR1 (0.44) TAAR1LTA4HPLA2G2AHRH1AOC3
SCHEMBL329176 0.77 LTA4H (0.43) TAAR1LTA4HSMN1; SMN2TSHRKCNA3
SCHEMBL1482787 0.74 LTA4H (0.39) LTA4HTSHRKCNA3
SCHEMBL6694296 0.73 DRD2 (0.43) TAAR1
SCHEMBL10863992 0.73 TAAR1 (0.38) TAAR1LTA4HPLA2G2AMAOA
SCHEMBL706489 0.73 KCNA3 (0.44) TAAR1LTA4HSMN1; SMN2TSHRKCNA3
SCHEMBL329378 0.73 KCNA3 (0.44) TAAR1LTA4HSMN1; SMN2TSHRKCNA3
SCHEMBL9323575 0.73 HDAC3 (0.40) TAAR1LTA4HSMN1; SMN2TSHRKCNA3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20220019146-A1 FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2022-01-20 US disclosed
US-20210278767-A1 FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-09-09 US disclosed
EP-3842863-A1 FILM FORMATION MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-06-30 EP disclosed
US-20210165327-A1 FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-06-03 US disclosed
EP-3816728-A1 FILM FORMING MATERIAL FOR LITHOGRAPHY, FILM FORMING COMPOSITION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-05-05 EP disclosed
WO-2020121949-A1 POLYIMIDE RESIN COMPOSITION AND POLYIMIDE FILM 三菱瓦斯化学株式会社 2020-06-18 WO disclosed
US-20200166844-A1 FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-05-28 US disclosed
EP-3627224-A1 FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FORMING FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND PATTERN FORMING METHOD Mitsubishi Gas Chemical Company, Inc. (JP) 2020-03-25 EP disclosed
CN-109791916-A Resin combination, semiconductor wiring layer laminates and semiconductor device 日立化成株式会社 2019-05-21 CN disclosed
US-8404564-B2 Adhesive film for semiconductor, composite sheet, and method for producing semiconductor chip using them HITACHI CHEMICAL COMPANY, LTD. (JP) 2013-03-26 US disclosed
US-20100112783-A1 ADHESIVE FILM FOR SEMICONDUCTOR, COMPOSITE SHEET, AND METHOD FOR PRODUCING SEMICONDUCTOR CHIP USING THEM HITACHI CHEMICAL COMPANY, LTD. (JP) 2010-05-06 US disclosed
EP-2139027-A1 ADHESIVE FILM FOR SEMICONDUCTOR, COMPOSITE SHEET, AND METHOD FOR PRODUCING SEMICONDUCTOR CHIP USING THEM Hitachi Chemical Company, Ltd. (JP) 2009-12-30 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20210165327-A1 FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN RALA, MRPL19, MRPL9 TAAR1 3671/4885LTA4H 899/4885PLA2G2A 125/4885
US-20220019146-A1 FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN LIPA, MLLT3, EPB41L2 TAAR1 2908/4885LTA4H 963/4885PLA2G2A 46/4885
US-20200166844-A1 FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR FILM FORMATION FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, AND METHOD FOR FORMING PATTERN LIPA, LCLAT1, LCAT TAAR1 3438/4885LTA4H 1076/4885PLA2G2A 155/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.