SCHEMBL3407173

SCHEMBL3407173

CC(C)(C)c1ccccc1[S+](c1ccccc1)c1ccccc1.CC(C)c1cc(C(C)C)c(S(=O)(=O)[O-])c(C(C)C)c1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
FABP4 P15090 2/20 0.38
FABP3 P05413 1/20 0.38
FABP5 Q01469 1/20 0.38
PSEN1 P49768 1/20 0.35
PSEN2 P49810 1/20 0.35
APH1B Q8WW43 1/20 0.35
NCSTN Q92542 1/20 0.35
APH1A Q96BI3 1/20 0.35
PSENEN Q9NZ42 1/20 0.35
NR3C1 P04150 1/20 0.34
ENPP3 O14638 1/20 0.33
ENPP1 P22413 1/20 0.33
F10 P00742 1/20 0.32
PLAU P00749 1/20 0.32
PLAT P00750 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
NR1I2 O75469 1/20 0.32
PIK3CD O00329 1/20 0.31
PIK3CA P42336 1/20 0.31
PIK3CB P42338 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2634462 0.94 FABP4 (0.43) FABP4FABP3FABP5PSEN1PSEN2
SCHEMBL30897219 0.94 FABP4 (0.43) FABP4FABP3FABP5PSEN1PSEN2
SCHEMBL383991 0.86 FABP4 (0.47) FABP4FABP3FABP5PSEN1PSEN2
SCHEMBL547282 0.84 FABP4 (0.39) FABP4FABP3FABP5PSEN1PSEN2
SCHEMBL5549719 0.81 FABP4 (0.37) FABP4FABP3FABP5PSEN1PSEN2
SCHEMBL5549805 0.80 FABP4 (0.42) FABP4FABP3FABP5PSEN1PSEN2
SCHEMBL5829971 0.80 FABP4 (0.38) FABP4FABP3FABP5PSEN1PSEN2
SCHEMBL3780561 0.79 FABP4 (0.44) FABP4FABP3FABP5PSEN1PSEN2
SCHEMBL30897217 0.79 FABP4 (0.41) FABP4FABP3FABP5NR3C1ENPP3
SCHEMBL2634792 0.79 FABP4 (0.41) FABP4FABP3FABP5NR3C1ENPP3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2256552-B1 Negative resist composition and patterning process using the same SHINETSU CHEMICAL CO (JP) 2017-07-12 EP disclosed
US-8361692-B2 Negative resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-29 US disclosed
US-20100304301-A1 Negative resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-12-02 US disclosed
EP-2256552-A1 Negative resist composition and patterning process using the same Shin-Etsu Chemical Co., Ltd. (JP) 2010-12-01 EP disclosed