Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FABP4 | P15090 | 2/20 | 0.39 |
| ▸ | FABP3 | P05413 | 1/20 | 0.39 |
| ▸ | FABP5 | Q01469 | 1/20 | 0.39 |
| ▸ | NR1I2 | O75469 | 3/20 | 0.34 |
| ▸ | MAOA | P21397 | 1/20 | 0.34 |
| ▸ | GAA | P10253 | 2/20 | 0.34 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.34 |
| ▸ | HSD11B1 | P28845 | 2/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.33 |
| ▸ | NPC1 | O15118 | 1/20 | 0.33 |
| ▸ | PLA2G1B | P04054 | 1/20 | 0.33 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.33 |
| ▸ | CASP3 | P42574 | 1/20 | 0.33 |
| ▸ | RAB9A | P51151 | 1/20 | 0.33 |
| ▸ | NFKB2 | Q00653 | 1/20 | 0.33 |
| ▸ | RELA | Q04206 | 1/20 | 0.33 |
| ▸ | SENP8 | Q96LD8 | 1/20 | 0.33 |
| ▸ | SENP7 | Q9BQF6 | 1/20 | 0.33 |
| ▸ | SENP6 | Q9GZR1 | 1/20 | 0.33 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5549125 | 0.95 | FABP4 (0.43) | FABP4FABP3FABP5NR1I2GAA | |
| SCHEMBL383991 | 0.90 | FABP4 (0.47) | FABP4FABP3FABP5GAATDP1 | |
| SCHEMBL3779723 | 0.89 | FABP4 (0.41) | FABP4FABP3FABP5NR1I2GAA | |
| SCHEMBL5549805 | 0.86 | FABP4 (0.42) | FABP4FABP3FABP5GAATDP1 | |
| SCHEMBL3780561 | 0.85 | FABP4 (0.44) | FABP4FABP3FABP5GAATDP1 | |
| SCHEMBL5549719 | 0.85 | FABP4 (0.37) | FABP4FABP3FABP5GAATDP1 | |
| SCHEMBL3407173 | 0.84 | FABP4 (0.38) | FABP4FABP3FABP5NR1I2GAA | |
| SCHEMBL5549111 | 0.80 | FABP4 (0.46) | FABP4FABP3FABP5GAATDP1 | |
| SCHEMBL3778770 | 0.80 | FABP3 (0.32) | FABP4FABP3FABP5 | |
| SCHEMBL6871436 | 0.80 | FABP4 (0.43) | FABP4FABP3FABP5NR1I2GAA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2244124-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-26 | — | — | EP | disclosed |
| EP-2244126-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-19 | — | — | EP | disclosed |
| EP-2000851-B1 | Photomask blank, resist pattern forming process, and photomask preparation process | SHINETSU CHEMICAL CO (JP) | 2015-07-29 | — | — | EP | disclosed |
| US-9023582-B2 | Photosensitive polymer, resist composition including the photosensitive polymer and method of preparing resist pattern using the resist composition | SAMSUNG DISPLAY CO., LTD. (KR) | 2015-05-05 | — | — | US | disclosed |
| EP-2146247-B1 | Resist patterning process and manufacturing photo mask | SHINETSU CHEMICAL CO (JP) | 2015-04-15 | — | — | EP | disclosed |
| US-8968979-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-03 | — | — | US | disclosed |
| EP-2267533-B1 | Resist composition | SHINETSU CHEMICAL CO (JP) | 2014-10-22 | — | — | EP | disclosed |
| EP-2244125-B1 | Resist composition | SHINETSU CHEMICAL CO (JP) | 2014-10-08 | — | — | EP | disclosed |
| EP-2146245-B1 | Resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2014-06-25 | — | — | EP | disclosed |
| US-20140141372-A1 | PHOTOSENSITIVE POLYMER, RESIST COMPOSITION INCLUDING THE PHOTOSENSITIVE POLYMER AND METHOD OF PREPARING RESIST PATTERN USING THE RESIST COMPOSITION | SAMSUNG DISPLAY CO., LTD. (KR) | 2014-05-22 | — | — | US | disclosed |
| US-20100009271-A1 | Resist patterning process and manufacturing photo mask | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2010-01-14 | — | — | US | disclosed |
| US-20100009299-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-01-14 | — | — | US | disclosed |
| US-20080305411-A1 | PHOTOMASK BLANK, RESIST PATTERN FORMING PROCESS, AND PHOTOMASK PREPARATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-12-11 | — | — | US | disclosed |
| EP-2000851-A1 | Photomask blank, resist pattern forming process, and photomask preparation process | Shin-Etsu Chemical Co., Ltd. (JP) | 2008-12-10 | — | — | EP | disclosed |
| US-7335458-B2 | Chemically amplified positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-02-26 | — | — | US | disclosed |
| US-7312016-B2 | Chemically amplified positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-25 | — | — | US | disclosed |
| US-7288363-B2 | Chemically amplified positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-30 | — | — | US | disclosed |
| US-20070037091-A1 | 2,4,6-Triisopropylbenzenesulfonate compound capable of generating an acid upon exposure to radiation or electron beams, polymer which changes solubility in alkaline developer under action of acid, and basic compound having high sensitivity, contrast, resolution, storage stability | KOITABASHI RYUJI | 2007-02-15 | — | — | US | disclosed |
| US-20060188810-A1 | Chemically amplified positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-08-24 | — | — | US | disclosed |
| US-20050233245-A1 | Chemically amplified positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2005-10-20 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100009299-A1 | Resist composition and patterning process | ARF4, FGFR2, ARF5 | FABP4 1262/4885FABP3 4274/4885FABP5 3337/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.