SCHEMBL3445147

SCHEMBL3445147

CCC(c1ccsc1)S(=O)(=O)O

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALOX5 P09917 1/20 0.39
CHRNB2 P17787 1/20 0.36
CHRNB4 P30926 1/20 0.36
CHRNA3 P32297 1/20 0.36
CHRNA4 P43681 1/20 0.36
GRIA4 P48058 2/20 0.34
TOP2A P11388 1/20 0.32
TOP2B Q02880 1/20 0.32
CYP3A4 P08684 1/20 0.32
CYP2D6 P10635 1/20 0.32
SLC6A2 P23975 1/20 0.32
SLC6A4 P31645 1/20 0.32
SLC6A3 Q01959 1/20 0.32
KCNH2 Q12809 1/20 0.32
SRC P12931 1/20 0.32
CES2 O00748 1/20 0.31
CES1 P23141 1/20 0.31
CXCR1 P25024 2/20 0.31
CXCR2 P25025 2/20 0.31
HSD11B1 P28845 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8354255 0.86 CHRNB2 (0.38) ALOX5CHRNB2CHRNB4CHRNA3CHRNA4
SCHEMBL8356434 0.85 CHRNB2 (0.37) ALOX5CHRNB2CHRNB4CHRNA3CHRNA4
SCHEMBL8603894 0.83 CHRNB2 (0.36) ALOX5CHRNB2CHRNB4CHRNA3CHRNA4
SCHEMBL8605601 0.83 ALOX5 (0.41) ALOX5CHRNB2CHRNB4CHRNA3CHRNA4
SCHEMBL6323246 0.82 ALOX5 (0.39) ALOX5CHRNB2CHRNB4CHRNA3CHRNA4
SCHEMBL27486779 0.77 LMNA (0.41) ALOX5CHRNB2CHRNB4CHRNA3CHRNA4
SCHEMBL6330663 0.76 GRIA4 (0.36) ALOX5CHRNB2CHRNB4CHRNA3CHRNA4
SCHEMBL8358478 0.76 ALOX5 (0.46) ALOX5CHRNB2CHRNB4CHRNA3CHRNA4
SCHEMBL6329644 0.76 ALOX5 (0.38) ALOX5CHRNB2CHRNB4CHRNA3CHRNA4
SCHEMBL8356404 0.74 ALOX5 (0.45) ALOX5CHRNB2CHRNB4CHRNA3CHRNA4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2138897-B1 CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN FUJITSU LTD (JP) 2016-08-03 EP disclosed
US-8821761-B2 Antistatic agent, antistatic film and articles coated with antistatic film SHOWA DENKO K.K. (JP) 2014-09-02 US disclosed
US-8557144-B2 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head FUJITSU LIMITED (JP) 2013-10-15 US disclosed
US-20100009296-A1 MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2138897-A1 MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD Fujitsu Limited (JP) 2009-12-30 EP disclosed
EP-2031025-A2 Antistatic agent, antistatic film and articles coated with antistatic film Showa Denko K.K. (JP) 2009-03-04 EP disclosed
EP-2019129-A2 Antistatic agent, antistatic film and articles coated with antistatic film Showa Denko K.K. (JP) 2009-01-28 EP disclosed
EP-1818369-A2 Antistatic agent, antistatic film and articles coated with antistatic film Showa Denko Kabushiki Kaisha (JP) 2007-08-15 EP disclosed
US-20070181857-A1 Antistatic agent, antistatic film and articles coated with antistatic film SHOWA DENKO K.K. 2007-08-09 US disclosed
EP-0459255-B1 Method for suppression of electrification HITACHI LTD (JP) 1998-03-18 EP disclosed
US-5589270-A Processed substrate obtained by a process for effecting suppression of electrification HITACHI, LTD. (JP) 1996-12-31 US disclosed
US-5437893-A Method for suppression of electrification HITACHI, LTD (JP) 1995-08-01 US disclosed
US-5256454-A Method for suppression of electrification HITACHI, LTD. (JP) 1993-10-26 US disclosed
EP-0459255-A2 Method for suppression of electrification HITACHI, LTD. (JP) 1991-12-04 EP disclosed