SCHEMBL3449192

SCHEMBL3449192

C=C(C(=O)OC1CCCO1)C(F)(F)F

nearest known ligand 0.33

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.33
POLB P06746 1/20 0.33
ALDH1A1 P00352 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6416782 0.95 MEN1 (0.33)
SCHEMBL8398106 0.80 ALDH1A1 (0.33) LMNAPOLBALDH1A1
SCHEMBL1225485 0.80 LMNA (0.32) LMNAPOLBALDH1A1
SCHEMBL775517 0.80
SCHEMBL76505 0.79 ALDH1A1 (0.41) LMNAPOLBALDH1A1
SCHEMBL12553878 0.78 POLB (0.36) LMNAPOLBALDH1A1
SCHEMBL28360693 0.78 MEN1 (0.33)
SCHEMBL65810 0.77
SCHEMBL775370 0.76
SCHEMBL16708624 0.76 LMNA (0.54) LMNAPOLBALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8030419-B2 Process for producing polymer for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2011-10-04 US disclosed
US-8030419-B2 Process for producing polymer for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2011-10-04 US disclosed
US-7820369-B2 Method for patterning a low activation energy photoresist INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2010-10-26 US disclosed
US-20100048848-A1 PROCESS FOR PRODUCING POLYMER FOR SEMICONDUCTOR LITHOGRAPHY MARUZEN PETROCHEMICAL CO., LTD. (JP) 2010-02-25 US disclosed
US-20100048848-A1 PROCESS FOR PRODUCING POLYMER FOR SEMICONDUCTOR LITHOGRAPHY MARUZEN PETROCHEMICAL CO., LTD. (JP) 2010-02-25 US disclosed
US-7193023-B2 Low activation energy photoresists INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-03-20 US disclosed
US-20050245706-A1 6-Trifluoromethyl-2 vinyloxy-4-oxatricyclo[4.2.1.03,7]noname-5-one, and polymer compound DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2005-11-03 US disclosed
US-20050123852-A1 Method for patterning a low activation energy photoresist GLOBALFOUNDRIES U.S. INC. 2005-06-09 US disclosed
US-20050124774-A1 Low activation energy photoresists INTERNATIONAL BUSINESS MACHINES CORPORATION 2005-06-09 US disclosed