SCHEMBL3481387

SCHEMBL3481387

CCCCC(CCO[SiH3])(c1ccccc1)c1ccccc1

nearest known ligand 0.49

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 5/20 0.49
ESR2 Q92731 4/20 0.49
LTA4H P09960 2/20 0.37
KIF11 P52732 1/20 0.35
SIGMAR1 Q99720 2/20 0.35
MEN1 O00255 4/20 0.33
KMT2A Q03164 3/20 0.33
CYP1A2 P05177 2/20 0.33
CYP2C9 P11712 2/20 0.33
CYP2C19 P33261 2/20 0.33
ATM Q13315 1/20 0.33
LMNA P02545 1/20 0.33
CYP3A4 P08684 1/20 0.33
CYP2D6 P10635 1/20 0.33
TSHR P16473 1/20 0.33
NFKB1 P19838 1/20 0.33
SCN1A P35498 1/20 0.33
MTOR P42345 1/20 0.33
RAB9A P51151 1/20 0.33
SCN2A Q99250 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481507 0.89 ESR1 (0.46) ESR1ESR2SIGMAR1MEN1KMT2A
SCHEMBL8158952 0.85 ESR1 (0.59) ESR1ESR2LTA4HKIF11SIGMAR1
SCHEMBL7543600 0.85 ESR1 (0.63) ESR1ESR2LTA4HKIF11SIGMAR1
SCHEMBL3481753 0.84 ESR1 (0.46) ESR1ESR2LTA4HKIF11SIGMAR1
SCHEMBL7781763 0.83 ESR1 (0.55) ESR1ESR2LTA4HKIF11SIGMAR1
SCHEMBL708789 0.83 LTA4H (0.37) ESR1ESR2LTA4HKIF11SIGMAR1
SCHEMBL3482254 0.81 CYP2C19 (0.37) ESR1ESR2LTA4HKIF11SIGMAR1
SCHEMBL8978824 0.81 ESR1 (0.53) ESR1ESR2SIGMAR1MEN1KMT2A
SCHEMBL4740387 0.81 ESR1 (0.59) ESR1ESR2KIF11MEN1KMT2A
SCHEMBL10448023 0.81 ESR1 (0.53) ESR1ESR2SIGMAR1MEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed