SCHEMBL3481753

SCHEMBL3481753

CCCCC(CO[SiH3])(c1ccccc1)c1ccccc1

nearest known ligand 0.46

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 3/20 0.46
ESR2 Q92731 3/20 0.46
KIF11 P52732 1/20 0.36
SIGMAR1 Q99720 2/20 0.36
LTA4H P09960 1/20 0.34
MEN1 O00255 3/20 0.34
KMT2A Q03164 3/20 0.34
CHRM2 P08172 2/20 0.33
CHRM3 P20309 2/20 0.33
ATM Q13315 1/20 0.33
KCNN4 O15554 1/20 0.33
EBP Q15125 1/20 0.33
GAA P10253 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482135 0.89 ESR1 (0.42) ESR1ESR2SIGMAR1MEN1KMT2A
SCHEMBL3481387 0.84 ESR1 (0.49) ESR1ESR2KIF11SIGMAR1LTA4H
SCHEMBL8158952 0.83 ESR1 (0.59) ESR1ESR2KIF11SIGMAR1LTA4H
SCHEMBL7543600 0.82 ESR1 (0.63) ESR1ESR2KIF11SIGMAR1LTA4H
SCHEMBL10612619 0.82 KIF11 (0.53) KIF11
SCHEMBL705822 0.82 KIF11 (0.36) ESR1ESR2KIF11SIGMAR1LTA4H
SCHEMBL705039 0.81 ESR1 (0.39) ESR1ESR2KIF11SIGMAR1CHRM2
SCHEMBL3482113 0.81 CYP2C19 (0.38) ESR1ESR2KIF11SIGMAR1LTA4H
SCHEMBL7781763 0.81 ESR1 (0.55) ESR1ESR2KIF11SIGMAR1LTA4H
SCHEMBL3481837 0.79 KIF11 (0.35) ESR1ESR2KIF11SIGMAR1LTA4H

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed