SCHEMBL3481495

SCHEMBL3481495

CCCCC(C)c1ccccc1[SiH2]O

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.39
POLB P06746 1/20 0.36
CNR2 P34972 1/20 0.33
CYSLTR2 Q9NS75 1/20 0.33
CYSLTR1 Q9Y271 1/20 0.33
ALDH1A1 P00352 4/20 0.33
CA2 P00918 1/20 0.33
CYP3A4 P08684 1/20 0.33
BDKRB2 P30411 1/20 0.33
KDM4E B2RXH2 1/20 0.32
SOAT1 P35610 1/20 0.32
GBA1 P04062 1/20 0.32
PTGES O14684 1/20 0.31
ALOX5 P09917 1/20 0.31
PPARG P37231 1/20 0.31
PPARA Q07869 1/20 0.31
MEN1 O00255 1/20 0.31
MAPT P10636 1/20 0.31
MAPK1 P28482 1/20 0.31
KMT2A Q03164 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481403 0.89 TSHR (0.41) TSHRPOLBCYSLTR2CYSLTR1SOAT1
SCHEMBL3482610 0.83 TSHR (0.35) TSHRPOLBCNR2CYSLTR2CYSLTR1
SCHEMBL6685019 0.81 TSHR (0.45) TSHRPOLBCNR2CYSLTR2CYSLTR1
SCHEMBL574034 0.77 TSHR (0.68) TSHRPOLBCNR2ALDH1A1CA2
SCHEMBL15105377 0.76 TSHR (0.41) TSHRPOLBCNR2CYSLTR2CYSLTR1
SCHEMBL6686891 0.76 TSHR (0.41) TSHRPOLBCA2CYP3A4SOAT1
SCHEMBL6678854 0.75 TSHR (0.43) TSHRCNR2CYSLTR2CYSLTR1ALDH1A1
SCHEMBL6683709 0.74 ESR1 (0.42) TSHRPOLBCNR2CYSLTR2CYSLTR1
SCHEMBL199521 0.74 GABRA1 (0.50) TSHRPOLBCA2CYP3A4SOAT1
SCHEMBL2697041 0.74 TSHR (0.39) TSHRPOLBCNR2CYSLTR2CYSLTR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10831101-B2 Photosensitive resin composition, method for manufacturing cured relief pattern, and semiconductor apparatus ASAHI KASEI KABUSHIKI KAISHA (JP) 2020-11-10 US disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed