SCHEMBL3482610

SCHEMBL3482610

CCCCC(C)c1ccccc1[SiH2]Cl

nearest known ligand 0.35

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.35
POLB P06746 1/20 0.33
CNR2 P34972 1/20 0.30
CYSLTR2 Q9NS75 1/20 0.30
CYSLTR1 Q9Y271 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481675 0.89 TSHR (0.37) TSHR
SCHEMBL3481495 0.83 TSHR (0.39) TSHRPOLBCNR2CYSLTR2CYSLTR1
SCHEMBL2269777 0.82 TSHR (0.53) TSHR
SCHEMBL6685019 0.81 TSHR (0.45) TSHRPOLBCNR2CYSLTR2CYSLTR1
SCHEMBL9286802 0.77 TSHR (0.38) TSHRPOLB
SCHEMBL9284668 0.77 ADRB2 (0.42) TSHRPOLB
SCHEMBL6682981 0.77 ADRB2 (0.42) TSHRPOLB
SCHEMBL9229150 0.77 TSHR (0.38) TSHRPOLB
SCHEMBL15105377 0.76 TSHR (0.41) TSHRPOLBCNR2CYSLTR2CYSLTR1
SCHEMBL6686891 0.76 TSHR (0.41) TSHRPOLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed