SCHEMBL3481601

SCHEMBL3481601

CCCCC(C)c1ccccc1CO[SiH3]

nearest known ligand 0.35

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
CYSLTR2 Q9NS75 6/20 0.34
CYSLTR1 Q9Y271 6/20 0.34
TSHR P16473 2/20 0.33
ADRA2A P08913 1/20 0.33
ADRA2B P18089 1/20 0.33
ADRA2C P18825 1/20 0.33
POLB P06746 1/20 0.31
CA2 P00918 1/20 0.31
ALDH1A1 P00352 1/20 0.31
CYP3A4 P08684 1/20 0.31
GBA1 P04062 1/20 0.30
LIPG Q9Y5X9 1/20 0.30
PTGES O14684 1/20 0.30
ALOX5 P09917 1/20 0.30
PPARG P37231 1/20 0.30
PPARA Q07869 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482438 0.90 TSHR (0.35) CYSLTR2CYSLTR1TSHRADRA2AADRA2B
SCHEMBL28724166 0.83 TSHR (0.50) TSHRALDH1A1PPARA
SCHEMBL6682017 0.81 CYSLTR2 (0.41) CYSLTR2CYSLTR1TSHRPOLBCA2
SCHEMBL6685019 0.78 TSHR (0.45) CYSLTR2CYSLTR1TSHRPOLBCA2
Ammonia Solution, Strong SCHEMBL6647616 0.78 CYSLTR2 (0.46) CYSLTR2CYSLTR1TSHRADRA2AADRA2B
SCHEMBL711281 0.77 GABRA1 (0.40) TSHRCA2CYP3A4
SCHEMBL3481841 0.77 TSHR (0.35) TSHRADRA2AADRA2BADRA2CPOLB
SCHEMBL6682255 0.76 CYSLTR2 (0.43) CYSLTR2CYSLTR1TSHRALDH1A1LIPG
SCHEMBL3482221 0.75 TSHR (0.38) TSHRPOLBCA2ALDH1A1CYP3A4
SCHEMBL13226180 0.75 SLC6A4 (0.46) CYSLTR2CYSLTR1TSHRALDH1A1GBA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed