SCHEMBL3481841

SCHEMBL3481841

CCCCC(C)c1ccccc1C(C)O[SiH3]

nearest known ligand 0.35

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.35
CTSK P43235 8/20 0.33
ALDH1A1 P00352 2/20 0.33
POLB P06746 1/20 0.33
CA2 P00918 1/20 0.33
CYP3A4 P08684 1/20 0.33
GBA1 P04062 1/20 0.32
ADRA2A P08913 1/20 0.31
ADRA2B P18089 1/20 0.31
ADRA2C P18825 1/20 0.31
PTGES O14684 1/20 0.31
ALOX5 P09917 1/20 0.31
PPARG P37231 1/20 0.31
PPARA Q07869 1/20 0.31
CNR2 P34972 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481876 0.89 TSHR (0.37) TSHRADRA2AADRA2BADRA2C
SCHEMBL6685019 0.85 TSHR (0.45) TSHRALDH1A1POLBCA2CYP3A4
SCHEMBL3482221 0.85 TSHR (0.38) TSHRCTSKALDH1A1POLBCA2
SCHEMBL28724160 0.82 TSHR (0.53) TSHRALDH1A1PPARA
SCHEMBL6686891 0.80 TSHR (0.41) TSHRPOLBCA2CYP3A4GBA1
SCHEMBL6678854 0.79 TSHR (0.43) TSHRALDH1A1PPARGCNR2
SCHEMBL6684349 0.77 CSNK1E (0.42) TSHRALDH1A1PPARGCNR2
SCHEMBL3481601 0.77 CYSLTR2 (0.34) TSHRALDH1A1POLBCA2CYP3A4
SCHEMBL3482259 0.76 TSHR (0.39) TSHR
SCHEMBL706042 0.76 ADRA2A (0.43) CYP3A4ADRA2AADRA2BADRA2CALOX5

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed