SCHEMBL3481606

SCHEMBL3481606

Cc1cc(C)cc([SiH2]O)c1

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.45
TSHR P16473 2/20 0.40
TPMT P51580 1/20 0.38
ACHE P22303 2/20 0.36
SELL P14151 1/20 0.36
SELP P16109 1/20 0.36
SELE P16581 1/20 0.36
PRSS1 P07477 1/20 0.36
PRSS2 P07478 1/20 0.36
C1S P09871 1/20 0.36
PRSS3 P35030 1/20 0.36
PGK1 P00558 2/20 0.32
PGK2 P07205 2/20 0.32
CA2 P00918 1/20 0.31
POLB P06746 1/20 0.31
TYR P14679 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
GAA P10253 1/20 0.30
MAPT P10636 1/20 0.30
RXRA P19793 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Methyl Alcohol SCHEMBL27974355 0.71 ALDH1A1 (0.64) ALDH1A1TSHRTPMTACHESELL
Methyl Alcohol SCHEMBL28397318 0.71 ALDH1A1 (0.64) ALDH1A1TSHRTPMTACHESELL
SCHEMBL28534132 0.71 ALDH1A1 (0.42) ALDH1A1TSHRTPMTACHESELL
SCHEMBL341533 0.71 ALDH1A1 (0.67) ALDH1A1TSHRTPMTACHESELL
SCHEMBL26115 0.71
SCHEMBL27660709 0.69 ALDH1A1 (0.47) ALDH1A1TSHRTPMTACHESELL
SCHEMBL27450096 0.69 ALDH1A1 (0.47) ALDH1A1TSHRTPMTACHESELL
SCHEMBL3482930 0.69 ALDH1A1 (0.40) ALDH1A1TSHRTPMTACHESELL
SCHEMBL3482433 0.69
SCHEMBL3834701 0.68 ALDH1A1 (0.60) ALDH1A1TSHRTPMTACHESELL

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed