SCHEMBL3481633

SCHEMBL3481633

CC(CC(C)c1ccccc1)O[SiH3]

nearest known ligand 0.52

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
TRPA1 O75762 4/20 0.52
TAAR1 Q96RJ0 3/20 0.48
AOC3 Q16853 2/20 0.44
RIPK1 Q13546 1/20 0.42
KDM4E B2RXH2 1/20 0.40
ALDH1A1 P00352 1/20 0.40
GFER P55789 1/20 0.40
L3MBTL1 Q9Y468 1/20 0.40
CYP2D6 P10635 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29192824 0.83 TRPA1 (0.55) TRPA1TAAR1AOC3RIPK1KDM4E
SCHEMBL3672929 0.79 TRPA1 (0.67) TRPA1TAAR1AOC3RIPK1KDM4E
SCHEMBL3482593 0.79 TRPA1 (0.51) TRPA1TAAR1AOC3RIPK1ALDH1A1
SCHEMBL9579271 0.75 TRPA1 (0.61) TRPA1TAAR1AOC3RIPK1KDM4E
SCHEMBL3864354 0.75 TRPA1 (0.61) TRPA1TAAR1AOC3RIPK1CYP2D6
SCHEMBL508412 0.75 TRPA1 (0.61) TRPA1TAAR1AOC3RIPK1KDM4E
SCHEMBL6268405 0.74 TAAR1 (0.52) TRPA1TAAR1AOC3RIPK1KDM4E
SCHEMBL3674520 0.73 TRPA1 (0.59) TRPA1TAAR1AOC3RIPK1KDM4E
SCHEMBL17038679 0.73 TRPA1 (0.59) TRPA1TAAR1AOC3RIPK1KDM4E
Hydrogen Peroxide SCHEMBL11213135 0.73 TRPA1 (0.65) TRPA1TAAR1AOC3RIPK1KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed