SCHEMBL3482593

SCHEMBL3482593

CCC(CC(C)c1ccccc1)O[SiH3]

nearest known ligand 0.51

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
TRPA1 O75762 4/20 0.51
TAAR1 Q96RJ0 3/20 0.44
AOC3 Q16853 2/20 0.40
LMNA P02545 1/20 0.39
RIPK1 Q13546 1/20 0.39
SLC7A5 Q01650 1/20 0.36
MAOA P21397 3/20 0.36
MAOB P27338 3/20 0.36
NISCH Q9Y2I1 3/20 0.36
LTB4R Q15722 1/20 0.35
LTB4R2 Q9NPC1 1/20 0.35
ALDH1A1 P00352 1/20 0.35
HPGD P15428 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481633 0.79 TRPA1 (0.52) TRPA1TAAR1AOC3RIPK1ALDH1A1
SCHEMBL19248831 0.77 TRPA1 (0.47) TRPA1TAAR1AOC3LMNARIPK1
SCHEMBL523682 0.75 HCAR2 (0.42) TAAR1LMNAALDH1A1
SCHEMBL3672929 0.75 TRPA1 (0.67) TRPA1TAAR1AOC3LMNARIPK1
SCHEMBL9490631 0.74 TRPA1 (0.67) TRPA1TAAR1AOC3LMNARIPK1
Benzene SCHEMBL5290987 0.73 TAAR1 (0.61) TRPA1TAAR1AOC3LMNARIPK1
SCHEMBL136376 0.73 TAAR1 (0.61) TRPA1TAAR1AOC3LMNARIPK1
SCHEMBL17453236 0.73 TAAR1 (0.61) TRPA1TAAR1AOC3LMNARIPK1
SCHEMBL4443642 0.73 TAAR1 (0.61) TRPA1TAAR1AOC3LMNARIPK1
SCHEMBL6285816 0.72 TRPA1 (0.58) TRPA1TAAR1AOC3LMNARIPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed