SCHEMBL3481678

SCHEMBL3481678

CCCC[Si](C)(OC)c1ccccc1

nearest known ligand 0.38

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.36
TSHR P16473 1/20 0.33
NR1H2 P55055 1/20 0.33
NR1H3 Q13133 1/20 0.33
PCSK9 Q8NBP7 1/20 0.32
ABCB1 P08183 1/20 0.32
MPO P05164 1/20 0.32
FAAH O00519 1/20 0.32
MGLL Q99685 1/20 0.32
NAAA Q02083 1/20 0.32
AR P10275 1/20 0.32
PTGS2 P35354 1/20 0.32
CYP1A2 P05177 1/20 0.32
CYP2C9 P11712 1/20 0.32
CYP2C19 P33261 1/20 0.32
ESR1 P03372 1/20 0.31
ESR2 Q92731 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5180277 0.94 LTA4H (0.37) LTA4HABCB1MPOFAAHMGLL
SCHEMBL3481489 0.88 ESR1 (0.33) LTA4HESR1ESR2
SCHEMBL12401084 0.86 LTA4H (0.37) LTA4HTSHRNR1H2NR1H3PCSK9
SCHEMBL18563871 0.85 LTA4H (0.34) LTA4HTSHRNR1H2NR1H3PCSK9
SCHEMBL18563868 0.83 LTA4H (0.35) LTA4HTSHRNR1H2NR1H3PCSK9
SCHEMBL13089594 0.83 MAPT (0.32) ESR1ESR2
SCHEMBL3482105 0.83 LTA4H (0.35) LTA4HTSHRNR1H2NR1H3PCSK9
SCHEMBL3482250 0.81 LTA4H (0.38) LTA4HTSHRNR1H2NR1H3ABCB1
SCHEMBL13089509 0.80 ESR1 (0.33) CYP1A2CYP2C19ESR1ESR2
SCHEMBL837628 0.79 ESR1 (0.35) LTA4HTSHRESR1ESR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
CN-101641767-B Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device FUJITSU LTD 2013-10-30 CN disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed