Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ESR1 | P03372 | 1/20 | 0.33 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.33 |
| ▸ | TP53 | P04637 | 1/20 | 0.31 |
| ▸ | CA4 | P22748 | 1/20 | 0.31 |
| ▸ | MAPT | P10636 | 1/20 | 0.31 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | GAA | P10253 | 1/20 | 0.31 |
| ▸ | HPGD | P15428 | 1/20 | 0.31 |
| ▸ | LTA4H | P09960 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3481678 | 0.88 | LTA4H (0.36) | ESR1ESR2LTA4H | |
| SCHEMBL5180277 | 0.86 | LTA4H (0.37) | ALDH1A1LTA4H | |
| SCHEMBL12680254 | 0.85 | ESR1 (0.34) | ESR1ESR2TP53MAPTKDM4E | |
| SCHEMBL13089509 | 0.83 | ESR1 (0.33) | ESR1ESR2CA4MAPTALDH1A1 | |
| SCHEMBL837628 | 0.83 | ESR1 (0.35) | ESR1ESR2TP53CA4MAPT | |
| SCHEMBL13089524 | 0.82 | ESR1 (0.31) | ESR1ESR2 | |
| SCHEMBL13089537 | 0.82 | MAPT (0.33) | ESR1ESR2CA4MAPTALDH1A1 | |
| SCHEMBL4729166 | 0.82 | ESR1 (0.32) | ESR1ESR2TP53MAPT | |
| SCHEMBL3482722 | 0.82 | ESR1 (0.32) | ESR1ESR2TP53MAPTKDM4E | |
| SCHEMBL3481608 | 0.80 | LMNA (0.35) | ESR1ESR2TP53ALDH1A1HPGD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115181223-B | Low-gloss matte auxiliary agent, preparation method thereof and molded body | 铨盛聚碳科技股份有限公司 | 2023-08-29 | — | — | CN | claimed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |