SCHEMBL3481682

SCHEMBL3481682

CCCCCc1ccccc1CO[SiH3]

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LIPG Q9Y5X9 1/20 0.50
ALOX5 P09917 2/20 0.45
PTGS2 P35354 1/20 0.45
THRA P10827 1/20 0.42
THRB P10828 1/20 0.42
NR1H2 P55055 1/20 0.41
NR1H3 Q13133 1/20 0.41
MEN1 O00255 1/20 0.41
TP53 P04637 1/20 0.41
CYP3A4 P08684 1/20 0.41
MAPT P10636 1/20 0.41
TYR P14679 1/20 0.41
ALOX15 P16050 1/20 0.41
TSHR P16473 1/20 0.41
HTT P42858 1/20 0.41
KMT2A Q03164 1/20 0.41
TDP1 Q9NUW8 1/20 0.41
PPARA Q07869 3/20 0.40
BID P55957 3/20 0.39
MCL1 Q07820 3/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705850 0.94 LIPG (0.43) LIPGALOX5PTGS2THRATHRB
SCHEMBL3482048 0.86 ADRA2A (0.46) LIPGPPARAPPARGCYP4F2CYP4A11
SCHEMBL5180288 0.85 LIPG (0.50) LIPGALOX5PTGS2THRATHRB
SCHEMBL2141528 0.84 LIPG (0.53) LIPGALOX5PTGS2THRATHRB
SCHEMBL30037094 0.83 LIPG (0.65) LIPGALOX5PTGS2THRATHRB
SCHEMBL82794 0.83 LIPG (0.65) LIPGALOX5PTGS2THRATHRB
SCHEMBL11005388 0.82 LIPG (0.56) LIPGALOX5PTGS2THRATHRB
SCHEMBL15162085 0.82 LIPG (0.56) LIPGALOX5PTGS2THRATHRB
SCHEMBL11127871 0.82 LIPG (0.56) LIPGALOX5PTGS2THRATHRB
SCHEMBL6679764 0.81 LIPG (0.69) LIPGALOX5PTGS2THRATHRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed