SCHEMBL3482048

SCHEMBL3482048

CCCc1ccccc1CO[SiH3]

nearest known ligand 0.46

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
ADRA2A P08913 4/20 0.46
ADRA2B P18089 4/20 0.46
ADRA2C P18825 4/20 0.46
HTR1A P08908 3/20 0.37
NISCH Q9Y2I1 1/20 0.37
PPARG P37231 4/20 0.36
PPARA Q07869 4/20 0.36
IDO1 P14902 2/20 0.33
LIPG Q9Y5X9 1/20 0.33
CYP4F2 P78329 1/20 0.33
CYP4A11 Q02928 1/20 0.33
PPARD Q03181 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705850 0.88 LIPG (0.43) ADRA2AADRA2BADRA2CPPARALIPG
SCHEMBL3481682 0.86 LIPG (0.50) PPARGPPARALIPGCYP4F2CYP4A11
SCHEMBL10481807 0.82 GABRA1 (0.41) NISCHIDO1
SCHEMBL7588765 0.82 ADRA2A (0.49) ADRA2AADRA2BADRA2CHTR1ANISCH
SCHEMBL703242 0.82 ADRA2A (0.33) ADRA2AADRA2BADRA2CHTR1ANISCH
SCHEMBL142479 0.81 ADRA2B (0.44) ADRA2AADRA2BADRA2CHTR1APPARG
SCHEMBL29488434 0.81 ADRA2B (0.44) ADRA2AADRA2BADRA2CHTR1APPARG
SCHEMBL8439589 0.80 ADRA2A (0.47) ADRA2AADRA2BADRA2CHTR1ANISCH
SCHEMBL30079758 0.78 IDO1 (0.57) ADRA2AADRA2BADRA2CIDO1
SCHEMBL9839840 0.78 ADRA2B (0.43) ADRA2AADRA2BADRA2CHTR1ANISCH

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-1539862-B1 COMPOSITION ACTING AS COUPLING AGENT FOR FILLED AND PEROXIDICALLY CROSSLINKING RUBBER COMPOUNDS EVONIK DEGUSSA GMBH (DE) 2009-12-09 EP disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-7625975-B2 Composition acting as coupling agent for filled and peroxidically crosslinking rubber compounds DEGUSSA AG (DE) 2009-12-01 US disclosed
US-20070032609-A1 Composition acting as coupling agent for filled and peroxidically crosslinking rubber compounds DEGUSSA AG (DE) 2007-02-08 US disclosed
EP-1539862-A1 COMPOSITION ACTING AS COUPLING AGENT FOR FILLED AND PEROXIDICALLY CROSSLINKING RUBBER COMPOUNDS Degussa AG (DE) 2005-06-15 EP disclosed
WO-2004018546-A1 COMPOSITION ACTING AS COUPLING AGENT FOR FILLED AND PEROXIDICALLY CROSSLINKING RUBBER COMPOUNDS DEGUSSA AG (DE) 2004-03-04 WO disclosed