SCHEMBL3481696

SCHEMBL3481696

CCCCC(C)[SiH](OCCC)OCCC

nearest known ligand 0.32

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
DNM1 Q05193 2/20 0.32
OPRM1 P35372 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28079113 0.93 OPRM1 (0.39) DNM1OPRM1
SCHEMBL29126603 0.91 OPRM1 (0.38) DNM1OPRM1
SCHEMBL28084759 0.91 OPRM1 (0.38) DNM1OPRM1
SCHEMBL29126580 0.91 OPRM1 (0.38) DNM1OPRM1
SCHEMBL6303527 0.91 OPRM1 (0.38) DNM1OPRM1
SCHEMBL28078988 0.91 OPRM1 (0.38) DNM1OPRM1
SCHEMBL6297161 0.91 OPRM1 (0.38) DNM1OPRM1
SCHEMBL5833766 0.91 ADRB2 (0.33) DNM1OPRM1
SCHEMBL1609052 0.86 HSD17B10 (0.31)
SCHEMBL1069446 0.85

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240270908-A1 POLYSILSESQUIOXANE COMPOSITION AND CURED PRODUCT NIPPON SHOKUBAI CO., LTD. (JP) 2024-08-15 US disclosed
CN-117043276-A Polysilsesquioxane composition and cured product 株式会社日本触媒 2023-11-10 CN disclosed
WO-2022202800-A1 POLYSILSESQUIOXANE COMPOSITION AND CURED PRODUCT 株式会社日本触媒 2022-09-29 WO disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-7005532-B2 Process of producing alkoxysilanes TOAGOSEI CO., LTD. (JP) 2006-02-28 US disclosed
US-6956076-B2 Inorganic particle-containing composition, transfer film comprising the same and plasma display panel production process JSR CORPORATION (JP) 2005-10-18 US disclosed
US-20050020845-A1 Process of producing alkoxysilanes TOAGOSEI CO., LTD. (JP) 2005-01-27 US disclosed
CN-1455933-A Composite particle for dielectrics, ultramicro particulate composite resin particle, composition for forming dielectrics and use thereof JSR CORP (JP) 2003-11-12 CN disclosed
US-6548582-B2 Inorganic particles, binder resin and at least one plasticizer selected from dialk(en)yl ester of alkanedioic acids, or alkoxyalkylylated esters therof, or 1,2-propanediol 1-alkanoates; flexibility JSR CORPORATION (JP) 2003-04-15 US disclosed
EP-0877003-B1 Glass paste composition JSR CORP (JP) 2002-09-18 EP disclosed
US-20020035183-A1 Inorgaic particle-containing composition, transfer film comprising the same and plasma display panel production process JSR CORPORATION (JP) 2002-03-21 US disclosed
US-20020016401-A1 Inorganic particle-containing composition, transfer film comprising the same and plasma display panel production process JSR CORPORATION (JP) 2002-02-07 US disclosed
US-6339118-B1 FOR FORMING BARRIER, ELECTRODE, RESISTOR, DIELECTRIC LAYER, PHOSPHOR, COLOR FILTER OR BLACK MATRIX OF PLASMA DISPLAY PANEL JSR CORPORATION (JP) 2002-01-15 US disclosed
EP-1003199-A2 Inorganic particle-containing composition, transfer film comprising the same and plasma display panel production process JSR Corporation (JP) 2000-05-24 EP disclosed
US-6046121-A MIXTURE COMPRISING GLASS POWDER, HYDROPHILIC ACRYLATE POLYMER BINDER RESIN IN A NONAQUEOUS SOLVENT HAVING BOILING POINT BETWEEN 100 AND 200 DEGREES C., AND A LOW VAPOR PRESSURE JSR CORPORATION (JP) 2000-04-04 US disclosed
EP-0987228-A2 Glass paste composition, and transfer film and plasma display panel comprising the same JSR Corporation (JP) 2000-03-22 EP disclosed
EP-0877003-A2 Glass paste composition JSR Corporation (JP) 1998-11-11 EP disclosed