SCHEMBL3481703

SCHEMBL3481703

CCc1ccc([SiH2]O)cc1

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LPL P06858 1/20 0.52
LIPG Q9Y5X9 1/20 0.52
ALDH1A1 P00352 2/20 0.44
TP53 P04637 1/20 0.43
SMN1; SMN2 Q16637 1/20 0.43
TAAR1 Q96RJ0 1/20 0.42
PLAU P00749 1/20 0.41
CYP2A6 P11509 1/20 0.41
TRPA1 O75762 1/20 0.41
IDO1 P14902 2/20 0.40
PLK1 P53350 1/20 0.40
EGFR P00533 1/20 0.39
MAPK1 P28482 2/20 0.38
L3MBTL1 Q9Y468 2/20 0.38
CA2 P00918 1/20 0.38
TSHR P16473 1/20 0.38
ATM Q13315 1/20 0.38
TDP1 Q9NUW8 1/20 0.38
CYP2C9 P11712 1/20 0.38
MEN1 O00255 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Methyl Alcohol SCHEMBL27728601 0.76 LPL (0.60) LPLLIPGALDH1A1TP53SMN1; SMN2
SCHEMBL8638315 0.76
SCHEMBL36295 0.76 TP53 (0.67) LPLLIPGALDH1A1TP53SMN1; SMN2
SCHEMBL4576538 0.76 TSHR (0.46) CA2TSHRHPGDHSD17B10
SCHEMBL11964388 0.76 LPL (0.48) LPLLIPGALDH1A1TP53SMN1; SMN2
SCHEMBL28163562 0.74 ABAT (0.52) TAAR1CA2
SCHEMBL3482406 0.74 LPL (0.46) LPLLIPGALDH1A1TP53SMN1; SMN2
Alcohol SCHEMBL27952977 0.74 LPL (0.57) LPLLIPGALDH1A1TP53SMN1; SMN2
SCHEMBL31498555 0.73 TP53 (0.62) LPLLIPGALDH1A1TP53SMN1; SMN2
SCHEMBL7542835 0.73 TP53 (0.62) LPLLIPGALDH1A1TP53SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed