SCHEMBL3482406

SCHEMBL3482406

CCc1ccc([SiH2]Cl)cc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LPL P06858 1/20 0.46
LIPG Q9Y5X9 1/20 0.46
TP53 P04637 1/20 0.43
TSHR P16473 1/20 0.43
MAPK1 P28482 1/20 0.43
ATM Q13315 1/20 0.43
TDP1 Q9NUW8 1/20 0.43
L3MBTL1 Q9Y468 1/20 0.43
TAAR1 Q96RJ0 1/20 0.42
CYP2A6 P11509 2/20 0.41
MGLL Q99685 2/20 0.40
ALDH1A1 P00352 1/20 0.39
CA2 P00918 1/20 0.38
SMN1; SMN2 Q16637 1/20 0.38
POLB P06746 1/20 0.38
PLAU P00749 1/20 0.37
LMNA P02545 1/20 0.37
TRPA1 O75762 1/20 0.36
PLK1 P53350 1/20 0.35
IDO1 P14902 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7542835 0.80 TP53 (0.62) LPLLIPGTP53TSHRMAPK1
SCHEMBL36295 0.76 TP53 (0.67) LPLLIPGTP53TSHRMAPK1
SCHEMBL8068829 0.76
SCHEMBL27998303 0.76 CA1 (0.39) CA2
SCHEMBL11964388 0.76 LPL (0.48) LPLLIPGTP53TSHRMAPK1
SCHEMBL3481703 0.74 LPL (0.52) LPLLIPGTP53TSHRMAPK1
Hydrogen Sulfide SCHEMBL29290777 0.73 TP53 (0.62) LPLLIPGTP53TSHRMAPK1
SCHEMBL28166306 0.73 TP53 (0.62) LPLLIPGTP53TSHRMAPK1
SCHEMBL31498555 0.73 TP53 (0.62) LPLLIPGTP53TSHRMAPK1
Ammonia Solution, Strong SCHEMBL27293386 0.73 TP53 (0.62) LPLLIPGTP53TSHRMAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed