SCHEMBL3481737

SCHEMBL3481737

Cc1cc(C)c([SiH2]Cl)c(C)c1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RAPGEF4 Q8WZA2 9/20 0.39
ALDH1A1 P00352 3/20 0.33
LMNA P02545 2/20 0.33
KDM4E B2RXH2 1/20 0.33
GAA P10253 1/20 0.33
MAPT P10636 1/20 0.33
CYP1A2 P05177 1/20 0.32
CYP2A6 P11509 1/20 0.32
TSHR P16473 1/20 0.32
TP53 P04637 1/20 0.31
TDP1 Q9NUW8 1/20 0.31
UGT2B17 O75795 2/20 0.30
CA1 P00915 1/20 0.30
CA2 P00918 1/20 0.30
MMP1 P03956 1/20 0.30
MMP2 P08253 1/20 0.30
MMP9 P14780 1/20 0.30
MMP8 P22894 1/20 0.30
MMP13 P45452 1/20 0.30
GRIN2D O15399 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10623731 0.76 KDM4E (0.40) ALDH1A1LMNAKDM4EMAPTTSHR
SCHEMBL8384844 0.75 RAPGEF4 (0.43) RAPGEF4ALDH1A1LMNAKDM4EGAA
SCHEMBL12609408 0.75 RAPGEF4 (0.43) RAPGEF4ALDH1A1LMNAKDM4EGAA
SCHEMBL8156125 0.73 RAPGEF4 (0.41) RAPGEF4ALDH1A1LMNAKDM4EGAA
Hydrochloric Acid SCHEMBL1033243 0.73 RAPGEF4 (0.41) RAPGEF4ALDH1A1LMNAKDM4EGAA
SCHEMBL3482109 0.71 BRD4 (0.40) ALDH1A1LMNAKDM4EMAPTCYP1A2
SCHEMBL8381909 0.71 RAPGEF4 (0.39) RAPGEF4ALDH1A1LMNAKDM4EGAA
SCHEMBL8741677 0.71 RAPGEF4 (0.39) RAPGEF4ALDH1A1LMNAKDM4EGAA
SCHEMBL3482233 0.71 CA2 (0.39) RAPGEF4ALDH1A1LMNAKDM4EGAA
SCHEMBL3482012 0.67 RAPGEF4 (0.36) RAPGEF4ALDH1A1LMNAKDM4EGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
CN-1837221-B Production processes for triorganomonochlorosilanes HOKKO CHEM IND CO 2011-06-08 CN disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
CN-1296374-C Method for producing triorgano-monoalkoxysilanes and method for producing triorgano-monochlorosilanes HOKKO CHEM IND CO (JP) 2007-01-24 CN disclosed
CN-1837221-A Production processes for triorganomonochlorosilanes HOKKO CHEM IND CO (JP) 2006-09-27 CN disclosed
CN-1612886-A Method for producing triorgano-monoalkoxysilanes and method for producing triorgano-monochlorosilanes HOKKO CHEM IND CO (JP) 2005-05-04 CN disclosed