Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | RAPGEF4 | Q8WZA2 | 3/20 | 0.36 |
| ▸ | ACHE | P22303 | 1/20 | 0.33 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | LMNA | P02545 | 1/20 | 0.31 |
| ▸ | GAA | P10253 | 1/20 | 0.31 |
| ▸ | MAPT | P10636 | 1/20 | 0.31 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.30 |
| ▸ | CYP2A6 | P11509 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3482274 | 0.75 | NLRP3 (0.33) | RAPGEF4LMNA | |
| SCHEMBL8384844 | 0.71 | RAPGEF4 (0.43) | RAPGEF4ACHEKDM4EALDH1A1LMNA | |
| SCHEMBL12609408 | 0.71 | RAPGEF4 (0.43) | RAPGEF4ACHEKDM4EALDH1A1LMNA | |
| SCHEMBL3481748 | 0.70 | ALDH1A1 (0.36) | ACHEALDH1A1 | |
| Hydrochloric Acid SCHEMBL1033243 | 0.69 | RAPGEF4 (0.41) | RAPGEF4ACHEKDM4EALDH1A1LMNA | |
| SCHEMBL8156125 | 0.69 | RAPGEF4 (0.41) | RAPGEF4ACHEKDM4EALDH1A1LMNA | |
| SCHEMBL8741677 | 0.67 | RAPGEF4 (0.39) | RAPGEF4KDM4EALDH1A1LMNAGAA | |
| SCHEMBL3481737 | 0.67 | RAPGEF4 (0.39) | RAPGEF4KDM4EALDH1A1LMNAGAA | |
| SCHEMBL8381909 | 0.67 | RAPGEF4 (0.39) | RAPGEF4KDM4EALDH1A1LMNAGAA | |
| SCHEMBL3482233 | 0.67 | CA2 (0.39) | RAPGEF4ACHEKDM4EALDH1A1LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |