SCHEMBL3481763

SCHEMBL3481763

Cc1cc(C)cc([SiH2]OCCCc2ccccc2)c1

nearest known ligand 0.44

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
IDO1 P14902 1/20 0.44
KDM4E B2RXH2 1/20 0.42
POLB P06746 1/20 0.42
NOS3 P29474 1/20 0.41
NOS1 P29475 1/20 0.41
NOS2 P35228 1/20 0.41
LMNA P02545 1/20 0.39
MAOB P27338 4/20 0.38
DRD2 P14416 1/20 0.37
DRD4 P21917 1/20 0.37
DRD3 P35462 1/20 0.37
MAOA P21397 2/20 0.36
HDAC6 Q9UBN7 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482681 0.90 NPC1 (0.39) IDO1KDM4EPOLBNOS3NOS1
SCHEMBL3482493 0.80 TACR1 (0.41) IDO1MAOBL3MBTL1
SCHEMBL3481542 0.77 TP53 (0.45) IDO1LMNAMAOBDRD3L3MBTL1
SCHEMBL3482361 0.75 CNR2 (0.36) NOS2
SCHEMBL3481727 0.74 TACR1 (0.39) LMNADRD3
SCHEMBL9331681 0.73 TACR1 (0.53) IDO1KDM4EPOLBL3MBTL1
SCHEMBL705170 0.73 IDO1 (0.55) IDO1POLBLMNADRD3MAOA
SCHEMBL2351932 0.73 NOS3 (0.56) KDM4EPOLBNOS3NOS1NOS2
SCHEMBL3482272 0.71
SCHEMBL27560150 0.71 CA1 (0.42) IDO1MAOBMAOA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed