SCHEMBL3481727

SCHEMBL3481727

Cc1cc(C)cc([SiH2]OCCC(c2ccccc2)c2ccccc2)c1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TACR1 P25103 11/20 0.39
HRH1 P35367 6/20 0.37
HTR2A P28223 5/20 0.37
CACNA1F O60840 1/20 0.35
CACNA1D Q01668 1/20 0.35
CACNA1S Q13698 1/20 0.35
CACNA1C Q13936 1/20 0.35
SLC6A2 P23975 2/20 0.34
SLC6A4 P31645 2/20 0.34
SLC6A3 Q01959 2/20 0.34
CHRM2 P08172 1/20 0.34
HTR1A P08908 1/20 0.34
ADRA2A P08913 1/20 0.34
ADORA3 P0DMS8 1/20 0.34
CHRM1 P11229 1/20 0.34
SMPD1 P17405 1/20 0.34
DRD1 P21728 1/20 0.34
TBXA2R P21731 1/20 0.34
ADRA1A P35348 1/20 0.34
OPRM1 P35372 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481898 0.83 TACR1 (0.44) TACR1CACNA1FCACNA1DCACNA1SCACNA1C
SCHEMBL703769 0.83 HRH1 (0.43) HRH1HTR2ASLC6A2SLC6A4SLC6A3
SCHEMBL3482681 0.77 NPC1 (0.39) TACR1HTR2AHTR1AADRA1A
SCHEMBL3482165 0.76 CYP19A1 (0.40) HRH1HTR2ACACNA1CSLC6A2SLC6A4
SCHEMBL3481763 0.74 IDO1 (0.44) DRD3LMNA
SCHEMBL3481483 0.74 TACR1 (0.40) TACR1HRH1HTR2ACACNA1FCACNA1D
SCHEMBL708049 0.73 HRH1 (0.47) HRH1HTR2AKCNH2
SCHEMBL3482493 0.73 TACR1 (0.41) TACR1
SCHEMBL3482679 0.73 TACR1 (0.39) TACR1CACNA1FCACNA1DCACNA1SCACNA1C
SCHEMBL3481761 0.72 TACR1 (0.40) TACR1CACNA1FCACNA1DCACNA1SCACNA1C

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed